Part Details for 1N5461B by Lockheed Martin Microwave
Overview of 1N5461B by Lockheed Martin Microwave
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 1N5461B
1N5461B CAD Models
1N5461B Part Data Attributes
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1N5461B
Lockheed Martin Microwave
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Datasheet
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1N5461B
Lockheed Martin Microwave
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | LOCKHEED MARTIN MICROWAVE | |
Package Description | O-LALF-W2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | HIGH RELIABILITY | |
Breakdown Voltage-Min | 30 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Cap Tolerance | 5% | |
Diode Capacitance Ratio-Min | 2.7 | |
Diode Capacitance-Nom | 6.8 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
Frequency Band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
JEDEC-95 Code | DO-7 | |
JESD-30 Code | O-LALF-W2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 0.4 W | |
Qualification Status | Not Qualified | |
Quality Factor-Min | 600 | |
Reverse Current-Max | 0.02 µA | |
Reverse Test Voltage | 25 V | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL | |
Variable Capacitance Diode Classification | ABRUPT |
Alternate Parts for 1N5461B
This table gives cross-reference parts and alternative options found for 1N5461B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N5461B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7 | Microsemi Corporation | 1N5461B vs 1N5461B |
1N5461B | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt | Msi Electronics Inc | 1N5461B vs 1N5461B |
JANTX1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2 | CRYSTALONICS Inc | 1N5461B vs JANTX1N5461B |
1N5461B | 6.8pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2 | Aeroflex Inc | 1N5461B vs 1N5461B |
JANTX1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Cobham Semiconductor Solutions | 1N5461B vs JANTX1N5461B |
1N5461B | Variable Capacitance Diode, 7pF C(T), 45V, Silicon, DO-7 | International Semiconductor Inc | 1N5461B vs 1N5461B |
JANTXV1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Cobham Semiconductor Solutions | 1N5461B vs JANTXV1N5461B |
JAN1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 | Cobham PLC | 1N5461B vs JAN1N5461B |
1N5461B | Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DO-7, GLASS PACKAGE-2 | CRYSTALONICS Inc | 1N5461B vs 1N5461B |