Part Details for 1N5767#T25 by Agilent Technologies Inc
Overview of 1N5767#T25 by Agilent Technologies Inc
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for 1N5767#T25
1N5767#T25 CAD Models
1N5767#T25 Part Data Attributes
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1N5767#T25
Agilent Technologies Inc
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1N5767#T25
Agilent Technologies Inc
Pin Diode, 100V V(BR), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | AGILENT TECHNOLOGIES INC | |
| Package Description | O-LALF-W2 | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.10.00.80 | |
| Additional Feature | LOW HARMONIC DISTORTION | |
| Application | ATTENUATOR; SWITCHING | |
| Breakdown Voltage-Min | 100 V | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| Diode Capacitance-Max | 0.4 pF | |
| Diode Element Material | SILICON | |
| Diode Forward Resistance-Max | 2.5 Ω | |
| Diode Type | PIN DIODE | |
| JESD-30 Code | O-LALF-W2 | |
| Minority Carrier Lifetime-Nom | 1.3 µs | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Package Body Material | GLASS | |
| Package Shape | ROUND | |
| Package Style | LONG FORM | |
| Power Dissipation-Max | 0.25 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Technology | POSITIVE-INTRINSIC-NEGATIVE | |
| Terminal Form | WIRE | |
| Terminal Position | AXIAL |