Part Details for 1N5767#T25 by Avago Technologies
Overview of 1N5767#T25 by Avago Technologies
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Part Details for 1N5767#T25
1N5767#T25 CAD Models
1N5767#T25 Part Data Attributes
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1N5767#T25
Avago Technologies
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Datasheet
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1N5767#T25
Avago Technologies
100V, SILICON, PIN DIODE, HERMETIC SEALED, GLASS PACKAGE-2
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | AVAGO TECHNOLOGIES INC | |
Package Description | O-LALF-W2 | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | LOW HARMONIC DISTORTION | |
Application | ATTENUATOR; SWITCHING | |
Breakdown Voltage-Min | 100 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Capacitance-Max | 0.4 pF | |
Diode Capacitance-Nom | 0.4 pF | |
Diode Element Material | SILICON | |
Diode Forward Resistance-Max | 2.5 Ω | |
Diode Res Test Current | 100 mA | |
Diode Res Test Frequency | 100 MHz | |
Diode Type | PIN DIODE | |
JESD-30 Code | O-LALF-W2 | |
JESD-609 Code | e0 | |
Minority Carrier Lifetime-Nom | 1.3 µs | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Power Dissipation-Max | 0.25 W | |
Qualification Status | Not Qualified | |
Reverse Test Voltage | 50 V | |
Surface Mount | NO | |
Technology | POSITIVE-INTRINSIC-NEGATIVE | |
Terminal Finish | TIN LEAD | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |