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1T224B-4M by:

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon

Part Details for 1T224B-4M by Msi Electronics Inc

Overview of 1T224B-4M by Msi Electronics Inc

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for 1T224B-4M

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1T224B-4M Part Data Attributes:

1T224B-4M Msi Electronics Inc
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1T224B-4M Msi Electronics Inc Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon
Part Life Cycle Code Obsolete
Ihs Manufacturer MSI ELECTRONICS INC
Package Description R-PDSO-L2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Additional Feature 3% MATCHED SET OF FOUR DIODES
Breakdown Voltage-Min 12 V
Configuration SEPARATE, 4 ELEMENTS
Diode Cap Tolerance 5%
Diode Capacitance Ratio-Min 7
Diode Capacitance-Nom 10 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
Frequency Band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-L2
Number of Elements 4
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Quality Factor-Min 200
Reverse Current-Max 0.01 µA
Reverse Test Voltage 10 V
Surface Mount YES
Terminal Form L BEND
Terminal Position DUAL
Variable Capacitance Diode Classification ABRUPT

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