Part Details for 1T224B-4M by Msi Electronics Inc
Overview of 1T224B-4M by Msi Electronics Inc
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for 1T224B-4M
1T224B-4M CAD Models
1T224B-4M Part Data Attributes:
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1T224B-4M
Msi Electronics Inc
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1T224B-4M
Msi Electronics Inc
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MSI ELECTRONICS INC | |
Package Description | R-PDSO-L2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Additional Feature | 3% MATCHED SET OF FOUR DIODES | |
Breakdown Voltage-Min | 12 V | |
Configuration | SEPARATE, 4 ELEMENTS | |
Diode Cap Tolerance | 5% | |
Diode Capacitance Ratio-Min | 7 | |
Diode Capacitance-Nom | 10 pF | |
Diode Element Material | SILICON | |
Diode Type | VARIABLE CAPACITANCE DIODE | |
Frequency Band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | |
JESD-30 Code | R-PDSO-L2 | |
Number of Elements | 4 | |
Number of Terminals | 2 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Qualification Status | Not Qualified | |
Quality Factor-Min | 200 | |
Reverse Current-Max | 0.01 µA | |
Reverse Test Voltage | 10 V | |
Surface Mount | YES | |
Terminal Form | L BEND | |
Terminal Position | DUAL | |
Variable Capacitance Diode Classification | ABRUPT |