1N5461BCHIP
Description: Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt

Overview of 1N5461BCHIP by Msi Electronics Inc

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

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Part Data Attributes for 1N5461BCHIP by Msi Electronics Inc

1N5461BCHIP
Msi Electronics Inc
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MSI ELECTRONICS INC
Package Description
X-XUUC-N
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.40
Additional Feature
HIGH Q
Breakdown Voltage-Min
30 V
Configuration
SINGLE
Diode Cap Tolerance
5%
Diode Capacitance Ratio-Min
2.7
Diode Capacitance-Nom
6.8 pF
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 Code
X-XUUC-N
Number of Elements
1
Operating Temperature-Max
175 °C
Package Body Material
UNSPECIFIED
Package Shape
UNSPECIFIED
Package Style
UNCASED CHIP
Qualification Status
Not Qualified
Quality Factor-Min
600
Rep Pk Reverse Voltage-Max
30 V
Reverse Current-Max
2e-8 µA
Reverse Test Voltage
25 V
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
UPPER
Variable Capacitance Diode Classification
ABRUPT
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  1. 1N5461BCHIP
    Msi Electronics Inc
    Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt
    VS

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