There are no models available for this part yet.
Overview of 1N6112US by Microchip Technology Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 8 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for 1N6112US by Microchip Technology Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
36AJ1981
|
Newark | 25.1 V Bi-Directional Tvs B-Body Sq. Melf Rohs Compliant: Yes |Microchip 1N6112US RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$13.2100 / $13.7400 | Buy Now | |
|
DISTI #
1N6112US-ND
|
DigiKey | TVS DIODE 13.7VWM 26.36V SQ-MELF Min Qty: 100 Lead time: 21 Weeks Container: Bulk | Temporarily Out of Stock |
|
$13.7400 | Buy Now | |
|
DISTI #
1N6112US
|
Avnet Americas | Diode TVS Single Bi-Dir 13.7V 500W 2-Pin E-MELF - Bulk (Alt: 1N6112US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 21 Weeks, 0 Days Container: Bulk | 0 |
|
$13.2100 / $14.8000 | Buy Now | |
|
DISTI #
494-1N6112US
|
Mouser Electronics | ESD Protection Diodes / TVS Diodes 25.1 V Bi-Directional TVS RoHS: Not Compliant | 0 |
|
$13.7400 | Order Now | |
|
DISTI #
1N6112US
|
Microchip Technology Inc | Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 |
0 Alternates Available |
|
$14.8000 | Buy Now | |
| Onlinecomponents.com | RoHS: Compliant | 0 |
|
$13.1200 / $27.4800 | Buy Now | ||
| NAC | TVS RoHS: Compliant Min Qty: 23 Package Multiple: 1 | 0 |
|
$12.8900 / $15.1000 | Buy Now | ||
| Master Electronics | RoHS: Compliant | 0 |
|
$13.1200 / $27.4800 | Buy Now |
CAD Models for 1N6112US by Microchip Technology Inc
Part Data Attributes for 1N6112US by Microchip Technology Inc
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
MICROCHIP TECHNOLOGY INC
|
|
Package Description
|
HERMETIC SEALED, GLASS, D-5B, E-MELF-2
|
|
Reach Compliance Code
|
compliant
|
|
Factory Lead Time
|
21 Weeks
|
|
Additional Feature
|
HIGH RELIABILITY
|
|
Breakdown Voltage-Min
|
16.25 V
|
|
Breakdown Voltage-Nom
|
18 V
|
|
Case Connection
|
ISOLATED
|
|
Clamping Voltage-Max
|
26.5 V
|
|
Configuration
|
SINGLE
|
|
Diode Element Material
|
SILICON
|
|
Diode Type
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
JESD-30 Code
|
O-LELF-R2
|
|
JESD-609 Code
|
e0
|
|
Non-rep Peak Rev Power Dis-Max
|
500 W
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Package Body Material
|
GLASS
|
|
Package Shape
|
ROUND
|
|
Package Style
|
LONG FORM
|
|
Polarity
|
BIDIRECTIONAL
|
|
Power Dissipation-Max
|
2 W
|
|
Qualification Status
|
Not Qualified
|
|
Rep Pk Reverse Voltage-Max
|
13.7 V
|
|
Surface Mount
|
YES
|
|
Technology
|
AVALANCHE
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
WRAP AROUND
|
|
Terminal Position
|
END
|
Alternate Parts for 1N6112US
This table gives cross-reference parts and alternative options found for 1N6112US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 1N6112US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JAN1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon | Sensitron Semiconductors | 1N6112US vs JAN1N6112US |
| 1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, GLASS, MELF-2 | Sensitron Semiconductors | 1N6112US vs 1N6112US |
| JANTX1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 | Micross Components | 1N6112US vs JANTX1N6112US |
| 1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon, | Bkc Semiconductors Inc | 1N6112US vs 1N6112US |
| JANTXV1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon | Microchip Technology Inc | 1N6112US vs JANTXV1N6112US |
| JAN1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon, | Bkc Semiconductors Inc | 1N6112US vs JAN1N6112US |
| JAN1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon | Microchip Technology Inc | 1N6112US vs JAN1N6112US |
| JANTXV1N6112US | Trans Voltage Suppressor Diode, 500W, 14V V(RWM), Bidirectional, 1 Element, Silicon | Sensitron Semiconductors | 1N6112US vs JANTXV1N6112US |
| JANS1N6112US | Trans Voltage Suppressor Diode, 500W, Bidirectional, 1 Element, Silicon | Microchip Technology Inc | 1N6112US vs JANS1N6112US |
| JANTX1N6112US | Trans Voltage Suppressor Diode, 500W, 13.7V V(RWM), Bidirectional, 1 Element, Silicon | Microchip Technology Inc | 1N6112US vs JANTX1N6112US |