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Overview of 1N8170US by Microsemi Corporation
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- Distributor Offerings: ( 0 listings )
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- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Energy and Power Systems
Transportation and Logistics
Renewable Energy
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CAD Models for 1N8170US by Microsemi Corporation
Part Data Attributes for 1N8170US by Microsemi Corporation
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
MICROSEMI CORP
|
Package Description
|
MELF-2
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.10.00.50
|
Breakdown Voltage-Min
|
58.9 V
|
Clamping Voltage-Max
|
85.3 V
|
Configuration
|
SINGLE
|
Diode Capacitance-Min
|
4 pF
|
Diode Element Material
|
SILICON
|
Diode Type
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code
|
O-LELF-R2
|
Non-rep Peak Rev Power Dis-Max
|
150 W
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
GLASS
|
Package Shape
|
ROUND
|
Package Style
|
LONG FORM
|
Polarity
|
UNIDIRECTIONAL
|
Power Dissipation-Max
|
1 W
|
Rep Pk Reverse Voltage-Max
|
53 V
|
Reverse Current-Max
|
0.5 µA
|
Reverse Test Voltage
|
53 V
|
Surface Mount
|
YES
|
Technology
|
AVALANCHE
|
Terminal Form
|
WRAP AROUND
|
Terminal Position
|
END
|