Part Details for 2N6661-E3 by Vishay Intertechnologies
Overview of 2N6661-E3 by Vishay Intertechnologies
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 2N6661-E3
2N6661-E3 CAD Models
2N6661-E3 Part Data Attributes
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2N6661-E3
Vishay Intertechnologies
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Datasheet
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2N6661-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, LEAD FREE, TO-39 TOLL LID, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | LEAD FREE, TO-39 TOLL LID, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 90 V | |
Drain Current-Max (ID) | 0.86 A | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 10 pF | |
JEDEC-95 Code | TO-205AD | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6.25 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | SILVER | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N6661-E3
This table gives cross-reference parts and alternative options found for 2N6661-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6661-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N6661-JQR-AE4 | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | TT Electronics Resistors | 2N6661-E3 vs 2N6661-JQR-AE4 |
2N6661 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Vishay Siliconix | 2N6661-E3 vs 2N6661 |
2N6661R1 | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661-E3 vs 2N6661R1 |
2N6661.MOD | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Resistors | 2N6661-E3 vs 2N6661.MOD |
2N6661.MODR1 | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | TT Electronics Resistors | 2N6661-E3 vs 2N6661.MODR1 |
2N6661 | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661-E3 vs 2N6661 |
2N6661-JQR-B | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | TT Electronics Resistors | 2N6661-E3 vs 2N6661-JQR-B |
2N6661.MODR1 | 900mA, 90V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AD, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | 2N6661-E3 vs 2N6661.MODR1 |
JANTX2N6661 | Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | Temic Semiconductors | 2N6661-E3 vs JANTX2N6661 |
2N6661-JQR-A | Small Signal Field-Effect Transistor, 0.9A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN | TT Electronics Resistors | 2N6661-E3 vs 2N6661-JQR-A |