Part Details for 2N6770R1 by TT Electronics Resistors
Overview of 2N6770R1 by TT Electronics Resistors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for 2N6770R1
2N6770R1 CAD Models
2N6770R1 Part Data Attributes
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2N6770R1
TT Electronics Resistors
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Datasheet
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2N6770R1
TT Electronics Resistors
Power Field-Effect Transistor, 12A I(D), 500V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TT ELECTRONICS PLC | |
Package Description | FLANGE MOUNT, O-MBFM-P2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-3 | |
JESD-30 Code | O-MBFM-P2 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | PIN/PEG | |
Terminal Position | BOTTOM | |
Transistor Element Material | SILICON |
Alternate Parts for 2N6770R1
This table gives cross-reference parts and alternative options found for 2N6770R1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6770R1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF451 | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | 2N6770R1 vs IRF451 |
2N6770E3 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, ROHS COMPLIANT, TO-3, METAL CAN-2 | Microsemi Corporation | 2N6770R1 vs 2N6770E3 |
JAN2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | 2N6770R1 vs JAN2N6770 |
IRF450 | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN | TT Electronics Resistors | 2N6770R1 vs IRF450 |
2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | Infineon Technologies AG | 2N6770R1 vs 2N6770 |
JANTXV2N6770 | 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | Intersil Corporation | 2N6770R1 vs JANTXV2N6770 |
IRF451 | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Harris Semiconductor | 2N6770R1 vs IRF451 |
IRF451 | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6770R1 vs IRF451 |
IRF451 | 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | 2N6770R1 vs IRF451 |
JANTX2N6770 | Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corporation | 2N6770R1 vs JANTX2N6770 |