Part Details for 2N6806 by International Rectifier
Overview of 2N6806 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N6806
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, P-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 135 |
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$1.7100 / $2.0100 | Buy Now |
Part Details for 2N6806
2N6806 CAD Models
2N6806 Part Data Attributes
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2N6806
International Rectifier
Buy Now
Datasheet
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Compare Parts:
2N6806
International Rectifier
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 66 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MILITARY STANDARD (USA) | |
| Surface Mount | NO | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 2N6806
This table gives cross-reference parts and alternative options found for 2N6806. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6806, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9230 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6806 vs IRF9230 |
| IRF9230 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | 2N6806 vs IRF9230 |
| IRF9230 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | 2N6806 vs IRF9230 |
| JANHCA2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | International Rectifier | 2N6806 vs JANHCA2N6806 |
| 2N6806PBF | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | 2N6806 vs 2N6806PBF |
| IRF9230 | 6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA | Intersil Corporation | 2N6806 vs IRF9230 |
| IRF9230R1 | 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6806 vs IRF9230R1 |
| JANTXV2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | 2N6806 vs JANTXV2N6806 |
| 2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | 2N6806 vs 2N6806 |
| JANHCA2N6806 | Power Field-Effect Transistor, 6.5A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | 2N6806 vs JANHCA2N6806 |