Part Details for 2N7002 by Diodes Incorporated
Results Overview of 2N7002 by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N7002 Information
2N7002 by Diodes Incorporated is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002
| Part # | Distributor | Description | Stock | Price | Buy | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 100 |
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$0.3300 / $0.5000 | Buy Now |
Part Details for 2N7002
2N7002 CAD Models
2N7002 Part Data Attributes
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2N7002
Diodes Incorporated
Buy Now
Datasheet
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2N7002
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | SOT-23 | |
| Package Description | Sot-23, 3 Pin | |
| Pin Count | 3 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.115 A | |
| Drain-source On Resistance-Max | 7.5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 5 Pf | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | Yes | |
| Terminal Finish | Tin/Lead (Sn80pb20) | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for 2N7002
This table gives cross-reference parts and alternative options found for 2N7002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2N7002T | Tak Cheong Electronics (Holdings) Co Ltd | Check for Price | Small Signal Field-Effect Transistor, | 2N7002 vs 2N7002T |
| 2N7002/T1 | NXP Semiconductors | Check for Price | TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 2N7002 vs 2N7002/T1 |
| 2N7002 | Vishay Semiconductors | Check for Price | Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, PLASTIC, SOT-23, 3 PIN | 2N7002 vs 2N7002 |
| 2N7002 | Calogic Inc | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 2N7002 vs 2N7002 |
| 2N7002MTF | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | 2N7002 vs 2N7002MTF |
| 2N7002T/R | YAGEO Corporation | Check for Price | Small Signal Field-Effect Transistor, 0.18A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002 vs 2N7002T/R |
| 2N7002L | Motorola Semiconductor Products | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, | 2N7002 vs 2N7002L |
| 2N7002TC | Diodes Incorporated | Check for Price | 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2N7002 vs 2N7002TC |
| 2N7002-E3 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2N7002 vs 2N7002-E3 |
| 2N7002 | TDK Micronas GmbH | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 2N7002 vs 2N7002 |
2N7002 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the 2N7002 is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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While the 2N7002 can be used as a switch, it's not ideal for high-frequency signals due to its relatively high capacitance and inductance. For high-frequency applications, consider using a dedicated high-frequency switch or a device with lower capacitance and inductance.
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To ensure the 2N7002 is fully turned on or off, apply a gate-source voltage (Vgs) that is well above or below the threshold voltage (Vth). A general rule of thumb is to use Vgs = 10V for full turn-on and Vgs = -5V for full turn-off. However, consult the datasheet for specific Vth and Vgs values for your application.
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The maximum continuous drain current (Id) rating for the 2N7002 is 500mA, as specified in the datasheet. However, the device can handle higher currents for short periods of time, such as during switching transients. Consult the datasheet for specific current ratings and derating factors.
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While the 2N7002 can be used in linear amplifier applications, it's not the most suitable device due to its relatively high drain-source resistance (Rds(on)) and limited transconductance. Consider using a dedicated linear amplifier device or a device with lower Rds(on) and higher transconductance for better performance.