Part Details for 2N7002LDBVR by Texas Instruments
Results Overview of 2N7002LDBVR by Texas Instruments
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (0 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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2N7002LDBVR Information
2N7002LDBVR by Texas Instruments is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for 2N7002LDBVR
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-2N7002LDBVRTR-ND
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DigiKey | 2N7002LDBVR Min Qty: 6000 Container: Tape & Reel |
0 Tape & Reel |
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$0.0939 | Buy Now |
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DISTI #
595-2N7002LDBVR
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Mouser Electronics | MOSFETs N-channel 5V enhance ment mode field effe RoHS: Compliant | 0 |
|
$0.0970 / $0.8100 | Order Now |
2N7002LDBVR Part Data Attributes
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2N7002LDBVR
Texas Instruments
Buy Now
Datasheet
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2N7002LDBVR
Texas Instruments
Power Field-Effect Transistor, 1.4A I(D), 9.7V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| ECCN Code | EAR99 | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 9.7 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 4.5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 5.5 Pf | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 1.43 A | |
| Surface Mount | Yes | |
| Terminal Finish | Matte Tin (Sn) - Annealed | |
| Terminal Form | Gull Wing | |
| Terminal Position | Dual | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 62 Ns | |
| Turn-on Time-Max (ton) | 2.5 Ns |