Part Details for 2N7008-G by Supertex Inc
Overview of 2N7008-G by Supertex Inc
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 2N7008-G
2N7008-G CAD Models
2N7008-G Part Data Attributes
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2N7008-G
Supertex Inc
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Datasheet
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2N7008-G
Supertex Inc
Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SUPERTEX INC | |
Part Package Code | TO-92 | |
Package Description | GREEN PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.23 A | |
Drain-source On Resistance-Max | 7.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JEDEC-95 Code | TO-92 | |
JESD-30 Code | O-PBCY-W3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7008-G
This table gives cross-reference parts and alternative options found for 2N7008-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7008-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7000_D26Z | N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/TAPE REEL | Fairchild Semiconductor Corporation | 2N7008-G vs 2N7000_D26Z |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | Supertex Inc | 2N7008-G vs 2N7000 |
2N7000ZL1 | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7008-G vs 2N7000ZL1 |
2N7000RLRM | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | Motorola Mobility LLC | 2N7008-G vs 2N7000RLRM |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Samsung Semiconductor | 2N7008-G vs 2N7000 |
2N7000 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Lite-On Semiconductor Corporation | 2N7008-G vs 2N7000 |
2N7000RLRA | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | 2N7008-G vs 2N7000RLRA |
2N7000G4 | Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, | TT Electronics Resistors | 2N7008-G vs 2N7000G4 |
2N7000RLRMG | 200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, LEAD FREE, CASE 29-11, TO-226, 3 PIN | Rochester Electronics LLC | 2N7008-G vs 2N7000RLRMG |
SN7000E6296 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Siemens | 2N7008-G vs SN7000E6296 |