Part Details for 2SK2403 by SANYO Electric Co Ltd
Overview of 2SK2403 by SANYO Electric Co Ltd
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Part Details for 2SK2403
2SK2403 CAD Models
2SK2403 Part Data Attributes
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2SK2403
SANYO Electric Co Ltd
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Datasheet
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2SK2403
SANYO Electric Co Ltd
Power Field-Effect Transistor, 3A I(D), 450V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP-FD, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SANYO ELECTRIC CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 450 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 3.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2SK2403
This table gives cross-reference parts and alternative options found for 2SK2403. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2SK2403, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQB3N40TM | 2.5A, 400V, 3.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | 2SK2403 vs FQB3N40TM |
FS3VS-9 | Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Mitsubishi Electric | 2SK2403 vs FS3VS-9 |
IRFW710A | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | 2SK2403 vs IRFW710A |
FS3VS-9 | Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN | Powerex Power Semiconductors | 2SK2403 vs FS3VS-9 |
STD2NB40-1 | 2A, 400V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | STMicroelectronics | 2SK2403 vs STD2NB40-1 |