There are no models available for this part yet.
Overview of 2N6083 by Microsemi Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Audio and Video Systems
Energy and Power Systems
Renewable Energy
CAD Models for 2N6083 by Microsemi Corporation
Part Data Attributes for 2N6083 by Microsemi Corporation
|
|
---|---|
Pbfree Code
|
No
|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
MICROSEMI CORP
|
Package Description
|
POST/STUD MOUNT, O-XRPM-F4
|
Pin Count
|
4
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
HIGH EFFICIENCY, WITH EMITTER BALLASTED RESISTORS
|
Collector Current-Max (IC)
|
4 A
|
Collector-Base Capacitance-Max
|
130 pF
|
Collector-Emitter Voltage-Max
|
18 V
|
Configuration
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE)
|
5
|
Highest Frequency Band
|
VERY HIGH FREQUENCY BAND
|
JESD-30 Code
|
O-XRPM-F4
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Temperature-Max
|
200 °C
|
Package Body Material
|
UNSPECIFIED
|
Package Shape
|
ROUND
|
Package Style
|
POST/STUD MOUNT
|
Polarity/Channel Type
|
NPN
|
Power Dissipation-Max (Abs)
|
65 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
FLAT
|
Terminal Position
|
RADIAL
|
Transistor Application
|
AMPLIFIER
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
200 MHz
|
Alternate Parts for 2N6083
This table gives cross-reference parts and alternative options found for 2N6083. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6083, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BLW34 | TRANSISTOR UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC, SOT-122A, 4 PIN, BIP RF Power | NXP Semiconductors | 2N6083 vs BLW34 |
SD1480 | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | Advanced Semiconductor Inc | 2N6083 vs SD1480 |
933582620112 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC PACKAGE-8, BIP RF Power | NXP Semiconductors | 2N6083 vs 933582620112 |
VHB80-12 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | Advanced Semiconductor Inc | 2N6083 vs VHB80-12 |
MS1579 | RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 0.320 X 0.250 INCH, PLASTIC, M156, 4 PIN | Microsemi Corporation | 2N6083 vs MS1579 |
MS1337 | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN | Microchip Technology Inc | 2N6083 vs MS1337 |
MRF654 | RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN, | Advanced Semiconductor Inc | 2N6083 vs MRF654 |
TPV385 | RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.500 INCH, FM-6 | Advanced Semiconductor Inc | 2N6083 vs TPV385 |
SD4013 | UHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.500 INCH, PLASTIC, M111, 6 PIN | STMicroelectronics | 2N6083 vs SD4013 |
VHB25-28S | RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, 0.380 INCH, STUD PACKAGE-4 | Advanced Semiconductor Inc | 2N6083 vs VHB25-28S |