Datasheets
934031850112 by: NXP Semiconductors

TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power

Part Details for 934031850112 by NXP Semiconductors

Overview of 934031850112 by NXP Semiconductors

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Applications Computing and Data Storage Electronic Manufacturing

Part Details for 934031850112

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934031850112 Part Data Attributes:

934031850112 NXP Semiconductors
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934031850112 NXP Semiconductors TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description FLANGE MOUNT, R-CDFM-F4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 125 V
Drain Current-Max (ID) 18 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for 934031850112

This table gives cross-reference parts and alternative options found for 934031850112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934031850112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN Motorola Semiconductor Products 934031850112 vs MRF151G
BLF278 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN NXP Semiconductors 934031850112 vs BLF278
BLF278,112 BLF278 NXP Semiconductors 934031850112 vs BLF278,112
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.850 X 0.385 INCH, LFG, 4 PIN Advanced Semiconductor Inc 934031850112 vs MRF151G
BLF278 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 Advanced Semiconductor Inc 934031850112 vs BLF278
933978520112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors 934031850112 vs 933978520112
Part Number Description Manufacturer Compare
MRF176GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN TE Connectivity 934031850112 vs MRF176GV
BLF278 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.385 X 0.850 INCH, FM-4 Advanced Semiconductor Inc 934031850112 vs BLF278
BLF278,112 BLF278 NXP Semiconductors 934031850112 vs BLF278,112
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN Motorola Semiconductor Products 934031850112 vs MRF151G
SD2932 300W - 50V HF/VHF DMOS PUSH-PULL TRANSISTOR STMicroelectronics 934031850112 vs SD2932
933978520112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors 934031850112 vs 933978520112
BLF278 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN NXP Semiconductors 934031850112 vs BLF278
VRF152GMP RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET Microchip Technology Inc 934031850112 vs VRF152GMP
TP1940 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC 934031850112 vs TP1940
MRF176GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM 934031850112 vs MRF176GV

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