Datasheets
MRF176GV by:

2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN

Part Details for MRF176GV by TE Connectivity

Overview of MRF176GV by TE Connectivity

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Part Details for MRF176GV

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MRF176GV Part Data Attributes

MRF176GV TE Connectivity
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MRF176GV TE Connectivity 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer TE CONNECTIVITY LTD
Pin Count 4
Manufacturer Package Code CASE 375-04
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 125 V
Drain Current-Max (ID) 16 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF176GV

This table gives cross-reference parts and alternative options found for MRF176GV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF176GV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF176GV 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC MRF176GV vs MRF176GV
MRF176GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM MRF176GV vs MRF176GV
Part Number Description Manufacturer Compare
SD2922 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, 0.400 X 0.860 INCH, PLASTIC, M244, 4 PIN STMicroelectronics MRF176GV vs SD2922
VFT300-50 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc MRF176GV vs VFT300-50
MRF176GV RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM MRF176GV vs MRF176GV
MRF151G 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN Motorola Mobility LLC MRF176GV vs MRF151G
933978520112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors MRF176GV vs 933978520112
BLF278,112 BLF278 NXP Semiconductors MRF176GV vs BLF278,112
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN Motorola Semiconductor Products MRF176GV vs MRF151G
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN MACOM MRF176GV vs MRF151G
934031850112 TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors MRF176GV vs 934031850112
MRF151G RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.850 X 0.385 INCH, LFG, 4 PIN Advanced Semiconductor Inc MRF176GV vs MRF151G

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