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Power Field-Effect Transistor

Part Details for 934055719118 by Nexperia

Overview of 934055719118 by Nexperia

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Electronic Manufacturing Entertainment and Gaming

Part Details for 934055719118

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934055719118 Part Data Attributes

934055719118 Nexperia
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934055719118 Nexperia Power Field-Effect Transistor
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NEXPERIA
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Avalanche Energy Rating (Eas) 462 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 35 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934055719118

This table gives cross-reference parts and alternative options found for 934055719118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934055719118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PSMN070-200B/T3 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors 934055719118 vs PSMN070-200B/T3
934055719118 TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors 934055719118 vs 934055719118
PSMN070-200B Power Field-Effect Transistor Nexperia 934055719118 vs PSMN070-200B
PSMN070-200B/T3 Power Field-Effect Transistor Nexperia 934055719118 vs PSMN070-200B/T3
PSMN070-200B TRANSISTOR 35 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors 934055719118 vs PSMN070-200B
Part Number Description Manufacturer Compare
IRFS23N20DTRRP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG 934055719118 vs IRFS23N20DTRRP
IRFS23N20D Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG 934055719118 vs IRFS23N20D
IRFS31N20D Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 Infineon Technologies AG 934055719118 vs IRFS31N20D
PSMN070-200B Power Field-Effect Transistor Nexperia 934055719118 vs PSMN070-200B
PSMN070-200B/T3 Power Field-Effect Transistor Nexperia 934055719118 vs PSMN070-200B/T3
IRFS23N20DTRL Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier 934055719118 vs IRFS23N20DTRL
IRFS23N20DTRLP Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG 934055719118 vs IRFS23N20DTRLP
IRFS31N20DTRLP Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 Infineon Technologies AG 934055719118 vs IRFS31N20DTRLP

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