Datasheets
934068491235 by: Nexperia

Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Part Details for 934068491235 by Nexperia

Overview of 934068491235 by Nexperia

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for 934068491235

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934068491235 Part Data Attributes:

934068491235 Nexperia
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934068491235 Nexperia Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.2 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 934068491235

This table gives cross-reference parts and alternative options found for 934068491235. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934068491235, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PMV30UN2VL PMV30UN2 - 20 V, N-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia 934068491235 vs PMV30UN2VL
SSM3K123TU(T5LMAA) Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Toshiba America Electronic Components 934068491235 vs SSM3K123TU(T5LMAA)
PMV30UN2R PMV30UN2 - 20 V, N-channel Trench MOSFET@en-us TO-236 3-Pin Nexperia 934068491235 vs PMV30UN2R
SSM3K123TU(T5LCLA) Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Toshiba America Electronic Components 934068491235 vs SSM3K123TU(T5LCLA)

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