Datasheets
ABL9001-852 by: Advanced Semiconductor Inc

Mixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon,

Part Details for ABL9001-852 by Advanced Semiconductor Inc

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Part Details for ABL9001-852

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ABL9001-852 Part Data Attributes

ABL9001-852 Advanced Semiconductor Inc
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ABL9001-852 Advanced Semiconductor Inc Mixer Diode, Low Barrier, X Band, 6.5dB Noise Figure, Silicon,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description S-XXMW-F3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.60
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Capacitance-Max 0.3 pF
Diode Element Material SILICON
Diode Type MIXER DIODE
Frequency Band X BAND
JESD-30 Code S-XXMW-F3
Noise Figure-Max 6.5 dB
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style MICROWAVE
Pulsed Input Power-Max 0.075 W
Qualification Status Not Qualified
Surface Mount YES
Technology SCHOTTKY
Terminal Form FLAT
Terminal Position UNSPECIFIED
Type of Schottky Barrier LOW BARRIER

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