Datasheets
AJT006 by: Advanced Semiconductor Inc

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 INCH, FM-2

Part Details for AJT006 by Advanced Semiconductor Inc

Overview of AJT006 by Advanced Semiconductor Inc

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Part Details for AJT006

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AJT006 Part Data Attributes

AJT006 Advanced Semiconductor Inc
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AJT006 Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 INCH, FM-2
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.9 A
Collector-Emitter Voltage-Max 32 V
Configuration SINGLE
DC Current Gain-Min (hFE) 30
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 250 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 25 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for AJT006

This table gives cross-reference parts and alternative options found for AJT006. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AJT006, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
AM80912-005 L BAND, Si, NPN, RF POWER TRANSISTOR, 0.310 X 0.310 INCH, HERMETIC SEALED, METAL CERAMIC, S064, IMPAC-2 STMicroelectronics AJT006 vs AM80912-005
Part Number Description Manufacturer Compare
MRF10031 TRANSISTOR,BJT,NPN,3A I(C),FO-57C TE Connectivity AJT006 vs MRF10031
MS2209 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, 2NFL, S042, 4 PIN Microsemi Corporation AJT006 vs MS2209
AM80912-030 L BAND, Si, NPN, RF POWER TRANSISTOR, 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, S036, 2 PIN STMicroelectronics AJT006 vs AM80912-030
AM80912-005 L BAND, Si, NPN, RF POWER TRANSISTOR, 0.310 X 0.310 INCH, HERMETIC SEALED, METAL CERAMIC, S064, IMPAC-2 STMicroelectronics AJT006 vs AM80912-005
MZ0912B50Y RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 INCH, FM-2 Advanced Semiconductor Inc AJT006 vs MZ0912B50Y
MS2213 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.400 X 0.400 INCH, HERMETIC SEALED, M214, 2 PIN Microsemi Corporation AJT006 vs MS2213
MRF10005 TRANSISTOR,BJT,NPN,1.25MA I(C),RFMOD TE Connectivity AJT006 vs MRF10005
MRF10031 L BAND, Si, NPN, RF POWER TRANSISTOR, HERMETIC SEALED, CASE 376B-02, 2 PIN Motorola Mobility LLC AJT006 vs MRF10031
MZ0912B50Y,114 MZ0912B50Y NXP Semiconductors AJT006 vs MZ0912B50Y,114

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