Datasheets
AP6618GM-HF by: Advanced Power Electronics Corp

TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power

Part Details for AP6618GM-HF by Advanced Power Electronics Corp

Overview of AP6618GM-HF by Advanced Power Electronics Corp

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Part Details for AP6618GM-HF

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AP6618GM-HF Part Data Attributes

AP6618GM-HF Advanced Power Electronics Corp
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AP6618GM-HF Advanced Power Electronics Corp TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer ADVANCED POWER ELECTRONICS CORP
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AP6618GM-HF

This table gives cross-reference parts and alternative options found for AP6618GM-HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AP6618GM-HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI9410DY-T1 Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies AP6618GM-HF vs SI9410DY-T1
Part Number Description Manufacturer Compare
IRF7353D1TRPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier AP6618GM-HF vs IRF7353D1TRPBF
IRF7353D1TR Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier AP6618GM-HF vs IRF7353D1TR
NVMSD6N303R2G 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 751-07, SOIC-8 onsemi AP6618GM-HF vs NVMSD6N303R2G
SI9410DY Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies AP6618GM-HF vs SI9410DY
NTMSD6N303R2SG 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 751-07, SOIC-8 onsemi AP6618GM-HF vs NTMSD6N303R2SG
NTMSD6N303R2 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 Rochester Electronics LLC AP6618GM-HF vs NTMSD6N303R2
NTMSD6N303R2 Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY, SOIC-8 Narrow Body, 2500-REEL onsemi AP6618GM-HF vs NTMSD6N303R2
IRF7353D1 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier AP6618GM-HF vs IRF7353D1
SI9410DY-T1 Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies AP6618GM-HF vs SI9410DY-T1
IRF7353D1PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier AP6618GM-HF vs IRF7353D1PBF

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