Datasheets
NTMSD6N303R2SG by: onsemi

6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 751-07, SOIC-8

Part Details for NTMSD6N303R2SG by onsemi

Overview of NTMSD6N303R2SG by onsemi

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Part Details for NTMSD6N303R2SG

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NTMSD6N303R2SG Part Data Attributes

NTMSD6N303R2SG onsemi
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NTMSD6N303R2SG onsemi 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 751-07, SOIC-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code SOT
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Manufacturer Package Code CASE 751-07
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 325 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 30 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTMSD6N303R2SG

This table gives cross-reference parts and alternative options found for NTMSD6N303R2SG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTMSD6N303R2SG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTMSD6N303R2 Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY, SOIC-8 Narrow Body, 2500-REEL onsemi NTMSD6N303R2SG vs NTMSD6N303R2
NTMSD6N303R2 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 Rochester Electronics LLC NTMSD6N303R2SG vs NTMSD6N303R2
NTMSD6N303R2G Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY, SOIC-8 Narrow Body, 2500-REEL onsemi NTMSD6N303R2SG vs NTMSD6N303R2G
Part Number Description Manufacturer Compare
IRF7353D1TRPBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier NTMSD6N303R2SG vs IRF7353D1TRPBF
IRF7353D1TR Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier NTMSD6N303R2SG vs IRF7353D1TR
NVMSD6N303R2G 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 751-07, SOIC-8 onsemi NTMSD6N303R2SG vs NVMSD6N303R2G
SI9410DY Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies NTMSD6N303R2SG vs SI9410DY
NTMSD6N303R2 6A, 30V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 751-07, SOIC-8 Rochester Electronics LLC NTMSD6N303R2SG vs NTMSD6N303R2
NTMSD6N303R2 Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8 FETKY, SOIC-8 Narrow Body, 2500-REEL onsemi NTMSD6N303R2SG vs NTMSD6N303R2
IRF7353D1 Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier NTMSD6N303R2SG vs IRF7353D1
AP6618GM-HF TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power Advanced Power Electronics Corp NTMSD6N303R2SG vs AP6618GM-HF
SI9410DY-T1 Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies NTMSD6N303R2SG vs SI9410DY-T1
IRF7353D1PBF Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier NTMSD6N303R2SG vs IRF7353D1PBF

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