Datasheets
APT6011B2VRG by:

Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for APT6011B2VRG by Microchip Technology Inc

Overview of APT6011B2VRG by Microchip Technology Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for APT6011B2VRG

Part # Distributor Description Stock Price Buy
DISTI # 78AH6147
Newark Mosfet Mos5 600 V 11 Ohm To-247 Max 3 T-Max Tube Rohs Compliant: Yes |Microchip APT6011B2VRG Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 1 $25.7300
  • 100 $22.2200
  • 250 $21.3800
  • 500 $20.8700
$20.8700 / $25.7300 Buy Now
DISTI # APT6011B2VRG-ND
DigiKey MOSFET N-CH 600V 49A T-MAX Min Qty: 30 Lead time: 43 Weeks Container: Tube Temporarily Out of Stock
  • 30 $25.7300
$25.7300 Buy Now
DISTI # APT6011B2VRG
Avnet Americas Trans MOSFET N-CH 600V 49A 3-Pin(3+Tab) T-MAX - Rail/Tube (Alt: APT6011B2VRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 43 Weeks, 0 Days Container: Tube 0
  • 1 $25.7300
  • 100 $22.2200
  • 250 $21.3800
  • 500 $20.8700
$20.8700 / $25.7300 Buy Now
DISTI # 494-APT6011B2VRG
Mouser Electronics MOSFET MOSFET MOS5 600 V 11 Ohm TO-247 MAX RoHS: Compliant 0
  • 30 $25.7300
  • 100 $22.2200
$22.2200 / $25.7300 Order Now
DISTI # APT6011B2VRG
Microchip Technology Inc MOSFET MOS5 600 V 110 mOhm TO-247 MAX, Projected EOL: 2044-04-30 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $25.7300
  • 100 $22.2200
  • 250 $21.3800
  • 500 $20.8700
  • 1,000 $20.3800
  • 5,000 $19.7200
$19.7200 / $25.7300 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 1 0
  • 30 $22.2700
$22.2700 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N-Channel - 600 V - 49A Continuous Drain (Id)@25°C - 110mOhm @ 24.5A, 10V - TO-247-3 Variant Package - Through Hole. 0
  • 8 $31.3100
  • 15 $25.0500
  • 23 $22.8700
  • 30 $22.4100
$22.4100 / $31.3100 Buy Now
DISTI # APT6011B2VRG
TME Transistor: N-MOSFET, POWER MOS 5®, unipolar, 600V, 49A, Idm: 196A Min Qty: 1 0
  • 1 $37.2000
  • 3 $33.4800
  • 10 $29.5800
$29.5800 / $37.2000 RFQ
NAC FG, MOSFET, 600V, 0.11_OHM, TO-247 T-MAX, RoHS RoHS: Compliant Min Qty: 14 Package Multiple: 1 Container: Tube 0
  • 1 $23.8600
  • 100 $21.9700
  • 500 $20.8700
  • 800 $20.3700
$20.3700 / $23.8600 Buy Now
DISTI # APT6011B2VRG
Avnet Silica Trans MOSFET N-CH 600V 49A 3-Pin(3+Tab) T-MAX (Alt: APT6011B2VRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 38 Weeks, 0 Days Silica - 0
Buy Now
DISTI # APT6011B2VRG
EBV Elektronik Trans MOSFET N-CH 600V 49A 3-Pin(3+Tab) T-MAX (Alt: APT6011B2VRG) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 44 Weeks, 0 Days EBV - 0
Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N-Channel - 600 V - 49A Continuous Drain (Id)@25°C - 110mOhm @ 24.5A, 10V - TO-247-3 Variant Package - Through Hole. 0
  • 8 $31.3100
  • 15 $25.0500
  • 23 $22.8700
  • 30 $22.4100
$22.4100 / $31.3100 Buy Now

Part Details for APT6011B2VRG

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APT6011B2VRG Part Data Attributes:

APT6011B2VRG Microchip Technology Inc
Buy Now Datasheet
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APT6011B2VRG Microchip Technology Inc Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description TMAX-3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 43 Weeks
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 3000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 49 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 196 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT6011B2VRG

This table gives cross-reference parts and alternative options found for APT6011B2VRG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT6011B2VRG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT8020B2FLLG Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT6011B2VRG vs APT8020B2FLLG
APT42F50S Power Field-Effect Transistor, 42A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT6011B2VRG vs APT42F50S
APT56M50L Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT6011B2VRG vs APT56M50L
APT56F50B2 Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB Microchip Technology Inc APT6011B2VRG vs APT56F50B2
APT6017JFLL Power Field-Effect Transistor, 31A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT6011B2VRG vs APT6017JFLL
APT56M50B2 Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT6011B2VRG vs APT56M50B2
APT56F50L Power Field-Effect Transistor, 56A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT6011B2VRG vs APT56F50L
APT6017B2FLLG Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT6011B2VRG vs APT6017B2FLLG
APT8020B2LLG Power Field-Effect Transistor, 38A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Microchip Technology Inc APT6011B2VRG vs APT8020B2LLG

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