Datasheets
APT66M60B2 by:

Power Field-Effect Transistor, 70A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX, 3 PIN

Part Details for APT66M60B2 by Microsemi Corporation

Overview of APT66M60B2 by Microsemi Corporation

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Part Details for APT66M60B2

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APT66M60B2 Part Data Attributes

APT66M60B2 Microsemi Corporation
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APT66M60B2 Microsemi Corporation Power Field-Effect Transistor, 70A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, T-MAX, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer MICROSEMI CORP
Package Description ROHS COMPLIANT, T-MAX, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 1845 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 245 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish PURE MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for APT66M60B2

This table gives cross-reference parts and alternative options found for APT66M60B2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of APT66M60B2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFK64N60P Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXYS Corporation APT66M60B2 vs IXFK64N60P
IXFK64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation APT66M60B2 vs IXFK64N60P3
IXFX64N60P Power Field-Effect Transistor, 64A I(D), 600V, 0.096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN Littelfuse Inc APT66M60B2 vs IXFX64N60P
IXFX64N60P3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation APT66M60B2 vs IXFX64N60P3
IXFK64N60P3 Power Field-Effect Transistor, Littelfuse Inc APT66M60B2 vs IXFK64N60P3
APT66M60L Power Field-Effect Transistor, 70A I(D), 600V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA Microchip Technology Inc APT66M60B2 vs APT66M60L
IXFB70N60Q2 Power Field-Effect Transistor, 70A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS-264, 3 PIN Littelfuse Inc APT66M60B2 vs IXFB70N60Q2
IXFK64N60Q3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation APT66M60B2 vs IXFK64N60Q3
IXFX64N60Q3 Power Field-Effect Transistor, 64A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation APT66M60B2 vs IXFX64N60Q3
IXFX64N60P3 Power Field-Effect Transistor, Littelfuse Inc APT66M60B2 vs IXFX64N60P3

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