Datasheets
AS4C16M32SC-7TINTR by: Alliance Memory Inc

Synchronous DRAM,

Part Details for AS4C16M32SC-7TINTR by Alliance Memory Inc

Overview of AS4C16M32SC-7TINTR by Alliance Memory Inc

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Price & Stock for AS4C16M32SC-7TINTR

Part # Distributor Description Stock Price Buy
DISTI # 85AK6897
Newark Sdr, 512Mb, 16M X 32, 3.3V, 86Pin Tsop Ii, 133 Mhz, Industrial Temp, C Diet&r |Alliance Memory AS4C16M32SC-7TINTR RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $17.3000
  • 5,000 $16.9000
$16.9000 / $17.3000 Buy Now
DISTI # AS4C16M32SC-7TINTR-ND
DigiKey IC DRAM 512MBIT PAR 86TSOP II Min Qty: 1000 Lead time: 16 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 1,000 $11.5362
$11.5362 Buy Now
DISTI # AS4C16M32SC-7TINTR
Avnet Americas DRAM Chip DDR SDRAM 512Mbit 16M x 32 3.3V 86-Pin TSOP II Tray - Tape and Reel (Alt: AS4C16M32SC-7TINTR) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 1,000 $10.8990
$10.8990 Buy Now
DISTI # 913-AS4C1632SC7TINTR
Mouser Electronics DRAM 512Mb 16Mx32 3.3V 143MHz SDRAM I-Temp RoHS: Compliant 0
  • 1,000 $11.2000
$11.2000 Order Now
Future Electronics SDRAM Memory IC 512Mb (16M x 32) Parallel 133 MHz 17 ns 86-TSOP II RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks Container: Reel 0
Reel
  • 1,000 $10.6900
$10.6900 Buy Now
DISTI # AS4C16M32SC-7TINTR
Avnet Silica (Alt: AS4C16M32SC-7TINTR) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now

Part Details for AS4C16M32SC-7TINTR

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AS4C16M32SC-7TINTR Part Data Attributes

AS4C16M32SC-7TINTR Alliance Memory Inc
Buy Now Datasheet
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AS4C16M32SC-7TINTR Alliance Memory Inc Synchronous DRAM,
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TSOP2,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Factory Lead Time 16 Weeks
Date Of Intro 2018-10-08
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G86
Length 22.22 mm
Memory Density 536870912 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 86
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 16MX32
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 0.5 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4C16M32SC-7TINTR

This table gives cross-reference parts and alternative options found for AS4C16M32SC-7TINTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C16M32SC-7TINTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SCB33S512320AE-75BI Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCB33S512320AE-75BI
SCE33S512320AF-6EBX Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AF-6EBX
SCE33S512320AE-75BX Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AE-75BX
SCE33S512320AF-6B Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AF-6B
K4M513233C-DP75 Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, ROHS COMPLIANT, FBGA-90 Samsung Semiconductor AS4C16M32SC-7TINTR vs K4M513233C-DP75
SCB33S512320AE-6B Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCB33S512320AE-6B
SCE33S512320AE-6BA2 Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AE-6BA2
SCE33S512320AE-75BI Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AE-75BI
SCE33S512320AF-6EBI Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AF-6EBI
SCE33S512320AE-6BX Synchronous DRAM, Xi'an UniIC Semiconductors Co Ltd AS4C16M32SC-7TINTR vs SCE33S512320AE-6BX

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