Datasheets
AS4LC1M16S0-12TC by: Alliance Semiconductor Corporation

Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

Part Details for AS4LC1M16S0-12TC by Alliance Semiconductor Corporation

Overview of AS4LC1M16S0-12TC by Alliance Semiconductor Corporation

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Applications Industrial Automation Renewable Energy Robotics and Drones

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Part # Manufacturer Description Datasheet
69057-012TCLF Amphenol Communications Solutions Minitek® 2.00mm, Board to Board, Unshrouded Vertical Stacking Header, Surface Mount, Double Row, 4 Positions, 2.00mm (0.079in) Pitch..

Part Details for AS4LC1M16S0-12TC

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AS4LC1M16S0-12TC Part Data Attributes

AS4LC1M16S0-12TC Alliance Semiconductor Corporation
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AS4LC1M16S0-12TC Alliance Semiconductor Corporation Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ALLIANCE SEMICONDUCTOR CORP
Part Package Code TSOP2
Package Description TSOP2, TSOP50,.46,32
Pin Count 50
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode DUAL BANK PAGE BURST
Access Time-Max 8.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 83 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G50
JESD-609 Code e0
Length 20.95 mm
Memory Density 16777216 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 50
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP50,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) 240
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.11 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4LC1M16S0-12TC

This table gives cross-reference parts and alternative options found for AS4LC1M16S0-12TC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4LC1M16S0-12TC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MB811171622A-100FN Synchronous DRAM, 1MX16, 54ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited AS4LC1M16S0-12TC vs MB811171622A-100FN
HY57V161610BLTC-12 Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc AS4LC1M16S0-12TC vs HY57V161610BLTC-12
TC59S1616AFT-10 IC 1M X 16 SYNCHRONOUS DRAM, 8.5 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components AS4LC1M16S0-12TC vs TC59S1616AFT-10
MB811171622E-84FN 1M X 16 SYNCHRONOUS DRAM, 8.5 ns, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited AS4LC1M16S0-12TC vs MB811171622E-84FN
MB811171622A-84FN Synchronous DRAM, 1MX16, 56ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Semiconductor Limited AS4LC1M16S0-12TC vs MB811171622A-84FN
HY57V161610BTC-12 Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50 SK Hynix Inc AS4LC1M16S0-12TC vs HY57V161610BTC-12
MB811171622E-84FN Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 FUJITSU Limited AS4LC1M16S0-12TC vs MB811171622E-84FN
Part Number Description Manufacturer Compare
VG3617161ET-8 Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Vanguard International Semiconductor Corporation AS4LC1M16S0-12TC vs VG3617161ET-8
M52D16161A-10TIG Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 Elite Semiconductor Memory Technology Inc AS4LC1M16S0-12TC vs M52D16161A-10TIG
IS42S16100B-6T Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, TSOP2-50 Integrated Silicon Solution Inc AS4LC1M16S0-12TC vs IS42S16100B-6T
MSM56V16160DH-15TS-K Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50 OKI Electric Industry Co Ltd AS4LC1M16S0-12TC vs MSM56V16160DH-15TS-K
IC42S16100E-7TL Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-50 Integrated Silicon Solution Inc AS4LC1M16S0-12TC vs IC42S16100E-7TL
HY57V161610ETP-55I Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 SK Hynix Inc AS4LC1M16S0-12TC vs HY57V161610ETP-55I
UPD4218160LG5-A70-7JF Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 NEC Electronics Group AS4LC1M16S0-12TC vs UPD4218160LG5-A70-7JF
TC59S1616AFT-12 IC 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50, Dynamic RAM Toshiba America Electronic Components AS4LC1M16S0-12TC vs TC59S1616AFT-12
IS42S16100E-5TL Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 INCH, LEAD FREE, TSOP2-50 Integrated Silicon Solution Inc AS4LC1M16S0-12TC vs IS42S16100E-5TL
UPD4516161G5-A12 Synchronous DRAM, 1MX16, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 Elpida Memory Inc AS4LC1M16S0-12TC vs UPD4516161G5-A12

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