Part Details for AS4SD4M16A2DG-10/883C by Micross Components
Overview of AS4SD4M16A2DG-10/883C by Micross Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 54HC221AJ/883C | Rochester Electronics | Replacement for National Semiconductor part number MM54HC221AJ/883C. Buy from authorized manufacturer Rochester Electronics. | |
| UHC508J/883C | Rochester Electronics LLC | UHC508 - POWER DRIVER, NAND, QUAD 2-INPUT - Dual marked (8550001DA) | |
| 54LS154F/883C | Rochester Electronics LLC | 54LS154 - 4-Line to 16-Line Decoder/Demultiplexer |
Part Details for AS4SD4M16A2DG-10/883C
AS4SD4M16A2DG-10/883C CAD Models
AS4SD4M16A2DG-10/883C Part Data Attributes
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AS4SD4M16A2DG-10/883C
Micross Components
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Datasheet
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AS4SD4M16A2DG-10/883C
Micross Components
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | AUSTIN SEMICONDUCTOR INC | |
| Part Package Code | TSOP | |
| Package Description | TSOP2, | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -55 °C | |
| Organization | 4MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | MILITARY | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
Alternate Parts for AS4SD4M16A2DG-10/883C
This table gives cross-reference parts and alternative options found for AS4SD4M16A2DG-10/883C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4SD4M16A2DG-10/883C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| TC59S6416CFT-10 | IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | AS4SD4M16A2DG-10/883C vs TC59S6416CFT-10 |
| V54C365164VDT8L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | AS4SD4M16A2DG-10/883C vs V54C365164VDT8L |
| IBM0364164CT3A-370 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | IBM | AS4SD4M16A2DG-10/883C vs IBM0364164CT3A-370 |
| EDI416S4030A10SI | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, TSOP2-54 | Microsemi Corporation | AS4SD4M16A2DG-10/883C vs EDI416S4030A10SI |
| VG36641641AT-10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Vanguard International Semiconductor Corporation | AS4SD4M16A2DG-10/883C vs VG36641641AT-10 |
| HYB39S64160T-80 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Siemens | AS4SD4M16A2DG-10/883C vs HYB39S64160T-80 |
| V54C365164VCT8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | AS4SD4M16A2DG-10/883C vs V54C365164VCT8 |
| MT48LC4M16A2TG-10L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | AS4SD4M16A2DG-10/883C vs MT48LC4M16A2TG-10L |
| W986416AH-8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | Winbond Electronics Corp | AS4SD4M16A2DG-10/883C vs W986416AH-8 |
| V54C365164VBT8 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | AS4SD4M16A2DG-10/883C vs V54C365164VBT8 |