Part Details for AUIRF7103QTR by Infineon Technologies AG
Overview of AUIRF7103QTR by Infineon Technologies AG
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for AUIRF7103QTR
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58T1277
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Newark | Mosfet Transistor, Dual N Channel, 3 A, 50 V, 0.13 Ohm, 10 V, 1 V Rohs Compliant: Yes |Infineon AUIRF7103QTR Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1777 |
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$0.5520 | Buy Now |
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DISTI #
83AK6799
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Newark | Mosfet, N-Ch, 50V, 3A, Soic Rohs Compliant: Yes |Infineon AUIRF7103QTR Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | AUIRF7103Q - 55V-60V N-Channel Automotive MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 81012 |
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$0.6507 / $0.7655 | Buy Now |
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Ameya Holding Limited | Min Qty: 10 | 31370 |
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$0.8122 / $0.8459 | Buy Now |
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Sense Electronic Company Limited | SOP8 | 3640 |
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RFQ |
Part Details for AUIRF7103QTR
AUIRF7103QTR CAD Models
AUIRF7103QTR Part Data Attributes
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AUIRF7103QTR
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
AUIRF7103QTR
Infineon Technologies AG
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 22 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.4 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF7103QTR
This table gives cross-reference parts and alternative options found for AUIRF7103QTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7103QTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7103 | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Infineon Technologies AG | AUIRF7103QTR vs IRF7103 |
| IRF7103 | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | AUIRF7103QTR vs IRF7103 |
| IRF7103TRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | International Rectifier | AUIRF7103QTR vs IRF7103TRPBF |
| IRF7103TRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, | Infineon Technologies AG | AUIRF7103QTR vs IRF7103TRPBF |
| IRF7103PBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | AUIRF7103QTR vs IRF7103PBF |
| IRF7103PBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | AUIRF7103QTR vs IRF7103PBF |
| AUIRF7103QTR | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | International Rectifier | AUIRF7103QTR vs AUIRF7103QTR |
| IRF7103UTRPBF | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | International Rectifier | AUIRF7103QTR vs IRF7103UTRPBF |
| AUIRF7103Q | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8 | Infineon Technologies AG | AUIRF7103QTR vs AUIRF7103Q |