Datasheets
AUIRF7342QTR by:

Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8

Part Details for AUIRF7342QTR by Infineon Technologies AG

Overview of AUIRF7342QTR by Infineon Technologies AG

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Applications Security and Surveillance Audio and Video Systems Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for AUIRF7342QTR

Part # Distributor Description Stock Price Buy
DISTI # 86AK4264
Newark Mosfet, P-Ch, 55V, 3.4A, Soic Rohs Compliant: Yes |Infineon AUIRF7342QTR RoHS: Compliant Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel 0
Buy Now
DISTI # 13AC8128
Newark Mosfet, Aec-Q101, Dual P-Ch, Soic-8, Transistor Polarity:Dual P Channel, Continuous Drain Current Id:-3.4A, Drain Source Voltage Vds:-55V, On Resistance Rds(On):0.095Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Rohs Compliant: Yes |Infineon AUIRF7342QTR RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 71241738
Verical Trans MOSFET P-CH 55V 3.4A Automotive AEC-Q101 8-Pin SOIC T/R RoHS: Compliant Min Qty: 8 Package Multiple: 1 Date Code: 2327 Americas - 32
  • 8 $4.3875
  • 12 $2.8000
$2.8000 / $4.3875 Buy Now
DISTI # SMC-AUIRF7342QTR
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 6685
RFQ
DISTI # C1S322001056689
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 32
  • 1 $3.5100
  • 10 $2.2400
$2.2400 / $3.5100 Buy Now
LCSC 55V 3.4A 105m3.4A10V 2W 3V250uA 2 P-Channel SO-8 MOSFETs ROHS 8
  • 1 $3.7496
  • 10 $3.6599
  • 30 $3.6001
  • 100 $3.5403
$3.5403 / $3.7496 Buy Now
Win Source Electronics MOSFET 2P-CH 55V 3.4A 8SOIC 29462
  • 12 $4.2400
  • 29 $3.4790
  • 45 $3.3700
  • 62 $3.2610
  • 80 $3.1530
  • 107 $2.8270
$2.8270 / $4.2400 Buy Now

Part Details for AUIRF7342QTR

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AUIRF7342QTR Part Data Attributes

AUIRF7342QTR Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AUIRF7342QTR Infineon Technologies AG Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 114 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 3.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 27 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRF7342QTR

This table gives cross-reference parts and alternative options found for AUIRF7342QTR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF7342QTR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7342 Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier AUIRF7342QTR vs IRF7342
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier AUIRF7342QTR vs IRF7342TRPBF
IRF7342TR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier AUIRF7342QTR vs IRF7342TR
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8 Infineon Technologies AG AUIRF7342QTR vs IRF7342TRPBF
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG AUIRF7342QTR vs IRF7342PBF
Part Number Description Manufacturer Compare
IRF7342TRPBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier AUIRF7342QTR vs IRF7342TRPBF
IRF7342PBF Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG AUIRF7342QTR vs IRF7342PBF
AP4951GM-HF TRANSISTOR 3.4 A, 60 V, 0.096 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power Advanced Power Electronics Corp AUIRF7342QTR vs AP4951GM-HF
IRF7342TR Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA International Rectifier AUIRF7342QTR vs IRF7342TR
IRF7342QTRPBF Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET Infineon Technologies AG AUIRF7342QTR vs IRF7342QTRPBF
IRF7342 Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, International Rectifier AUIRF7342QTR vs IRF7342

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