BB659C
Description: Variable Capacitance Diode, Very High Frequency, 39pF C(T), Silicon

Overview of BB659C by Siemens

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Internet of Things (IoT) Smart Cities Transportation and Logistics Agriculture Technology Automotive

CAD Models for BB659C by Siemens
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Part Data Attributes for BB659C by Siemens

BB659C
Siemens
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SIEMENS A G
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.80
Configuration
SINGLE
Diode Capacitance Ratio-Min
9.5
Diode Capacitance-Nom
39 pF
Diode Element Material
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
Frequency Band
VERY HIGH FREQUENCY
JESD-30 Code
R-PDSO-F2
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
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    Siemens
    Variable Capacitance Diode, Very High Frequency, 39pF C(T), Silicon
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Alternate Parts for BB659C

This table gives cross-reference parts and alternative options found for BB659C. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BB659C, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
HVD350B Variable Capacitance Diode, SFP, 2 PIN Hitachi Ltd BB659C vs HVD350B
MV1626 Variable Capacitance Diode, 12pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Cobham PLC BB659C vs MV1626
MMBV105GLT1 UHF BAND, 30V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB, CASE 318-08, 3 PIN Motorola Mobility LLC BB659C vs MMBV105GLT1
HVU306A Variable Capacitance Diode, Very High Frequency, 31.75pF C(T), 32V, Silicon, URP, 2 PIN Hitachi Ltd BB659C vs HVU306A
HVC300B Variable Capacitance Diode, Very High Frequency, 50pF C(T), 34V, Silicon, UFP, SC-79, 2 PIN Hitachi Ltd BB659C vs HVC300B
HVU306B Variable Capacitance Diode, Very High Frequency, 31.5pF C(T), 34V, Silicon, PLASTIC, URP, 2 PIN Hitachi Ltd BB659C vs HVU306B
HVU417C Variable Capacitance Diode, 8.6pF C(T), 30V, Silicon, PLASTIC, URP, 2 PIN Hitachi Ltd BB659C vs HVU417C
BB833E6433 Variable Capacitance Diode, S Band, 9.3pF C(T), Silicon Siemens BB659C vs BB833E6433
MA4ST2300-1141T VARACTOR DIODE,SINGLE,18PF C(T),SOD-323 TE Connectivity BB659C vs MA4ST2300-1141T
BBY51-07 Variable Capacitance Diode, 5.3pF C(T), 7V, Silicon, Hyperabrupt Siemens BB659C vs BBY51-07

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