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BBY53-02W by:

Variable Capacitance Diode, 5.3pF C(T), 6V, Silicon, Hyperabrupt

Part Details for BBY53-02W by Siemens

Overview of BBY53-02W by Siemens

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Price & Stock for BBY53-02W

Part # Distributor Description Stock Price Buy
Chip1Cloud Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) 35500
RFQ

Part Details for BBY53-02W

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BBY53-02W Part Data Attributes:

BBY53-02W Siemens
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BBY53-02W Siemens Variable Capacitance Diode, 5.3pF C(T), 6V, Silicon, Hyperabrupt
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description R-PDSO-F2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Breakdown Voltage-Min 6 V
Configuration SINGLE
Diode Capacitance Ratio-Min 1.8
Diode Capacitance-Nom 5.3 pF
Diode Element Material SILICON
Diode Type VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-F2
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Variable Capacitance Diode Classification HYPERABRUPT

Alternate Parts for BBY53-02W

This table gives cross-reference parts and alternative options found for BBY53-02W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BBY53-02W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BBY53-02W Variable Capacitance Diode, 5.3pF C(T), 6V, Silicon, Hyperabrupt, SCD-80, 2 PIN Infineon Technologies AG BBY53-02W vs BBY53-02W
Part Number Description Manufacturer Compare
HVU202A Variable Capacitance Diode, 15.29pF C(T), 34V, Silicon, URP, 2 PIN Hitachi Ltd BBY53-02W vs HVU202A
HVC355B-E 6.8pF, SILICON, VARIABLE CAPACITANCE DIODE, ULTRA SMALL, UFP-2 Renesas Electronics Corporation BBY53-02W vs HVC355B-E
1SV245 DIODE UHF-KA BAND, 3.93 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, 1-1E1A, 2 PIN, Variable Capacitance Diode Toshiba America Electronic Components BBY53-02W vs 1SV245
MV1626 Variable Capacitance Diode, 12pF C(T), 20V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2 Cobham PLC BBY53-02W vs MV1626
V912 12pF, 28V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7, GLASS PACKAGE-2 Aeroflex Inc BBY53-02W vs V912
MA4ST404-T/R HF-UHF BAND, 22V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, SURFACE MOUNT PACKAGE-3 TE Connectivity BBY53-02W vs MA4ST404-T/R
BB833E6433 Variable Capacitance Diode, S Band, 9.3pF C(T), Silicon Siemens BBY53-02W vs BB833E6433
BBY51 Variable Capacitance Diode, 5.3pF C(T), 7V, Silicon, Hyperabrupt Siemens BBY53-02W vs BBY51
HVU359TRF 15V, SILICON, VARIABLE CAPACITANCE DIODE Renesas Electronics Corporation BBY53-02W vs HVU359TRF
HVU355BTRF Variable Capacitance Diode, 15V, Silicon Hitachi Ltd BBY53-02W vs HVU355BTRF

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