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| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| onsemi | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin |
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| Philco/Philips | SOT223 Bipolar Junction GP BJT Transistors Polarity | $0.0731 / $0.4875 |
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| NXP Semiconductors | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin | $0.1260 / $0.4200 |
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| Philips Semiconductors | Transistor | $0.0975 / $0.6500 |
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| Freescale Semiconductor | POWER BIPOLAR TRANSISTOR, 1A I(C), 20V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN | $0.1512 / $0.5040 |
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| Philips E C G Inc | NPN MEDIUM POWER TRANSISTOR Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon |
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| Semitel Electronics | SOT-223 |
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| Fairchild Semiconductor Corporation | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin | $0.9180 / $1.1792 |
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| Zetex / Diodes Inc | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin |
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| Jiangsu Changjiang Electronics Technology Co Ltd | Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon |
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| Motorola Semiconductor Products | Power Bipolar Transistor, 1-Element, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin |
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| Rochester Electronics LLC | 1A, 20V, NPN, Si, POWER TRANSISTOR |
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| Siemens | Power Bipolar Transistor, 1A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
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| Unisonic Technologies Co Ltd | Power Bipolar Transistor, 1-Element, NPN |
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| YAGEO Corporation | Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon |
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| Diodes Incorporated | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin |
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| North American Philips Discrete Products Div | Transistor |
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| Infineon Technologies AG | Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin |
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| Shenzhen Heketai Electronics Co Ltd | NPN bipolar transistor in SOT-223 package with 20 V collector-emitter voltage, 1 A collector current, high current gain, low saturation voltage, and 40 MHz transition frequency for general AF applications. |
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| Galaxy Microelectronics | Power Bipolar Transistor |
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| Nexperia | Power Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin |
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