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| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Philips Semiconductors | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Infineon Technologies AG | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| NXP Semiconductors | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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| Siemens | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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| North American Philips Discrete Products Div | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Telefunken Microelectronics Gmbh | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| YAGEO Corporation | Small Signal Field-Effect Transistor, 0.03A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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