Part Details for BLF348 by NXP Semiconductors
Overview of BLF348 by NXP Semiconductors
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- Number of FFF Equivalents:
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- Part Data Attributes
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Applications
Consumer Electronics
Part Details for BLF348
BLF348 CAD Models
BLF348 Part Data Attributes
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BLF348
NXP Semiconductors
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Datasheet
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BLF348
NXP Semiconductors
TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN, FET RF Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT | |
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT262A1 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 500 W | |
| Power Dissipation-Max (Abs) | 500 W | |
| Power Gain-Min (Gp) | 11 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLF348
This table gives cross-reference parts and alternative options found for BLF348. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF348, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 933978490112 | TRANSISTOR 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power | NXP Semiconductors | BLF348 vs 933978490112 |
| MRF141G | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN | Motorola Mobility LLC | BLF348 vs MRF141G |
| MRF175GV | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 375-04, 4 PIN | TE Connectivity | BLF348 vs MRF175GV |
| MRF175GV | RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN | MACOM | BLF348 vs MRF175GV |
| BLF248,112 | BLF248 | NXP Semiconductors | BLF348 vs BLF248,112 |
| VFT300-28 | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.400 INCH, FM-4 | Advanced Semiconductor Inc | BLF348 vs VFT300-28 |
| MRF175GV | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET | Motorola Mobility LLC | BLF348 vs MRF175GV |
| BLF248 | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SOT-262A1, 4 PIN | NXP Semiconductors | BLF348 vs BLF248 |
| BLF248 | RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, FM-4 | Advanced Semiconductor Inc | BLF348 vs BLF248 |
| MRF175GV | RF Power Field-Effect Transistor, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, | Advanced Semiconductor Inc | BLF348 vs MRF175GV |