There are no models available for this part yet.
Overview of BLF6G38-10,118 by NXP Semiconductors
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 7 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Industrial Automation
CAD Models for BLF6G38-10,118 by NXP Semiconductors
Part Data Attributes for BLF6G38-10,118 by NXP Semiconductors
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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NXP SEMICONDUCTORS
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Package Description
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ROHS COMPLIANT, CERAMIC PACKAGE-2
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Pin Count
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2
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Case Connection
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SOURCE
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Configuration
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SINGLE
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DS Breakdown Voltage-Min
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65 V
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Drain Current-Max (ID)
|
3.1 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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Highest Frequency Band
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L BAND
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JESD-30 Code
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R-CDFP-F2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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200 °C
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Package Body Material
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CERAMIC, METAL-SEALED COFIRED
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Package Shape
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RECTANGULAR
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Package Style
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FLATPACK
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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N-CHANNEL
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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FLAT
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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AMPLIFIER
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Transistor Element Material
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SILICON
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Alternate Parts for BLF6G38-10,118
This table gives cross-reference parts and alternative options found for BLF6G38-10,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF6G38-10,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BLF6G38-10G,118 | BLF6G38-10G | NXP Semiconductors | BLF6G38-10,118 vs BLF6G38-10G,118 |
| BLF6G38-10,112 | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10,118 vs BLF6G38-10,112 |
| BLF6G38-10 | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10,118 vs BLF6G38-10 |
| BLF6G38-100 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G38-10,118 vs BLF6G38-100 |
| BLF6G38-10G,118 | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G38-10,118 vs BLF6G38-10G,118 |
| BLF6G38-10G,112 | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G38-10,118 vs BLF6G38-10G,112 |
| BLF6G38-10G | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10,118 vs BLF6G38-10G |