Part Details for BLF6G38-10G,112 by Ampleon
Overview of BLF6G38-10G,112 by Ampleon
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BLF6G38-10G,112
BLF6G38-10G,112 CAD Models
BLF6G38-10G,112 Part Data Attributes
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BLF6G38-10G,112
Ampleon
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Datasheet
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BLF6G38-10G,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 65 V | |
Drain Current-Max (ID) | 3.1 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | L BAND | |
JESD-30 Code | S-CDSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for BLF6G38-10G,112
This table gives cross-reference parts and alternative options found for BLF6G38-10G,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF6G38-10G,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BLF6G38-10G | RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G38-10G,112 vs BLF6G38-10G |
BLF6G38-10,112 | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10G,112 vs BLF6G38-10,112 |
BLF6G38-100 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | Ampleon | BLF6G38-10G,112 vs BLF6G38-100 |
BLF6G38-10 | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10G,112 vs BLF6G38-10 |
BLF6G38-10G | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10G,112 vs BLF6G38-10G |
BLF6G38-10,118 | TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power | NXP Semiconductors | BLF6G38-10G,112 vs BLF6G38-10,118 |
BLF6G38-10G,112 | BLF6G38-10G | NXP Semiconductors | BLF6G38-10G,112 vs BLF6G38-10G,112 |
BLF6G38-10G,118 | BLF6G38-10G | NXP Semiconductors | BLF6G38-10G,112 vs BLF6G38-10G,118 |