There are no models available for this part yet.
Overview of BSC030N03LSGE8176 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 5 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for BSC030N03LSGE8176 by Infineon Technologies AG
Part Data Attributes for BSC030N03LSGE8176 by Infineon Technologies AG
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Part Life Cycle Code
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Obsolete
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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GREEN, PLASTIC, TDSON-8
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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Avalanche Energy Rating (Eas)
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75 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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23 A
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Drain-source On Resistance-Max
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0.0047 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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R-PDSO-F8
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Number of Elements
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1
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Pulsed Drain Current-Max (IDM)
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400 A
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Surface Mount
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YES
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Terminal Form
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FLAT
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Terminal Position
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DUAL
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for BSC030N03LSGE8176
This table gives cross-reference parts and alternative options found for BSC030N03LSGE8176. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC030N03LSGE8176, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NVTFS4C05NTAG | Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel, WDFN8 3.3x3.3, 0.65P, 1500-REEL, Automotive Qualified | onsemi | BSC030N03LSGE8176 vs NVTFS4C05NTAG |
| SSP7436N | Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, MINIATURE, SOP-8 | Secos Corporation | BSC030N03LSGE8176 vs SSP7436N |
| SSP7436N-C | Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, MINIATURE, SOP-8 | Secos Corporation | BSC030N03LSGE8176 vs SSP7436N-C |
| SI7634DP-T1-E3 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 | Vishay Siliconix | BSC030N03LSGE8176 vs SI7634DP-T1-E3 |
| SIR460DP-T1-GE3 | Power Field-Effect Transistor, 24.3A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 | Vishay Intertechnologies | BSC030N03LSGE8176 vs SIR460DP-T1-GE3 |