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Power Field-Effect Transistor, 24.3A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
79AH6491
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Newark | N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIR460DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4790 | Buy Now |
DISTI #
15R4884
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Newark | N-Channel 30-V (D-S) Mosfet |Vishay SIR460DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4530 / $0.5340 | Buy Now |
DISTI #
SIR460DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 24.3A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR460DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4548 / $0.5778 | Buy Now |
DISTI #
781-SIR460DP-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 581 |
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$0.4860 / $1.1300 | Buy Now |
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Future Electronics | N-CH POWERPAK SO-8 BWL 20V 4.7MOHM@10V- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks Container: Reel | 0Reel |
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$0.4350 / $0.4550 | Buy Now |
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Future Electronics | N-CH POWERPAK SO-8 BWL 20V 4.7MOHM@10V- LEAD(PB) AND HALOGEN FREE RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.4350 / $0.4550 | Buy Now |
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Bristol Electronics | 93910 |
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RFQ | ||
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Quest Components | 75128 |
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$0.5109 / $1.7030 | Buy Now | |
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Quest Components | 1648 |
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$0.8750 / $2.5000 | Buy Now | |
DISTI #
SIR460DP-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.4460 / $0.4740 | Buy Now |
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SIR460DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR460DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 24.3A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, POWERPAK, SO-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 24.3 A | |
Drain-source On Resistance-Max | 0.0047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-C8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SIR460DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR460DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC030N03LSGATMA1 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR460DP-T1-GE3 vs BSC030N03LSGATMA1 |
BSC034N03LSCG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR460DP-T1-GE3 vs BSC034N03LSCG |
BSC030N03LSGE8176 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR460DP-T1-GE3 vs BSC030N03LSGE8176 |
SI7634DP-T1-E3 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SO-8 | Vishay Siliconix | SIR460DP-T1-GE3 vs SI7634DP-T1-E3 |
SSP7434N-C | Power Field-Effect Transistor, 24A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, MINIATURE, SOP-8 | Secos Corporation | SIR460DP-T1-GE3 vs SSP7434N-C |
SSP7436N-C | Power Field-Effect Transistor, 24A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN AND LEAD FREE, MINIATURE, SOP-8 | Secos Corporation | SIR460DP-T1-GE3 vs SSP7436N-C |
NVTFS4C05NTAG | Single N-Channel Power MOSFET 30V, 102A, 3.6mΩ 1500 / Tape & Reel, WDFN8 3.3x3.3, 0.65P, 1500-REEL, Automotive Qualified | onsemi | SIR460DP-T1-GE3 vs NVTFS4C05NTAG |