CM30TF-24H
Description: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel

Overview of CM30TF-24H by Mitsubishi Electric

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Part Data Attributes for CM30TF-24H by Mitsubishi Electric

CM30TF-24H
Mitsubishi Electric
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MITSUBISHI ELECTRIC CORP
Package Description
FLANGE MOUNT, R-XUFM-D17
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
SUPER FAST RECOVERY
Case Connection
ISOLATED
Collector Current-Max (IC)
30 A
Collector-Emitter Voltage-Max
1200 V
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-Emitter Voltage-Max
20 V
JESD-30 Code
R-XUFM-D17
Number of Elements
6
Number of Terminals
17
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
310 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
SOLDER LUG
Terminal Position
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
MOTOR CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
150 ns
Turn-on Time-Nom (ton)
100 ns
VCEsat-Max
3.4 V
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  1. CM30TF-24H
    Mitsubishi Electric
    Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel
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Alternate Parts for CM30TF-24H

This table gives cross-reference parts and alternative options found for CM30TF-24H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CM30TF-24H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel Powerex Power Semiconductors CM30TF-24H vs CM30TF-24H
Part Number Description Manufacturer Compare
CM30TF-24H Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel Powerex Power Semiconductors CM30TF-24H vs CM30TF-24H
MG25Q6ES42 TRANSISTOR 25 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM30TF-24H vs MG25Q6ES42
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens CM30TF-24H vs BSM25GD120DN2E3224
BSM25GD120DN2E3224 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG CM30TF-24H vs BSM25GD120DN2E3224
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens CM30TF-24H vs BSM25GD120DN2
MG25Q6ES50 TRANSISTOR 35 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor Toshiba America Electronic Components CM30TF-24H vs MG25Q6ES50
6MBI25LB-120 Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, M607, 17 PIN Fuji Electric Co Ltd CM30TF-24H vs 6MBI25LB-120
BSM25GD120DN2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, ECONOPACK-17 Infineon Technologies AG CM30TF-24H vs BSM25GD120DN2
BSM25GD120D2 Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel Siemens CM30TF-24H vs BSM25GD120D2

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