Part Details for BSP300E6327 by Siemens
Overview of BSP300E6327 by Siemens
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for BSP300E6327
BSP300E6327 CAD Models
BSP300E6327 Part Data Attributes
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BSP300E6327
Siemens
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Datasheet
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BSP300E6327
Siemens
Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SIEMENS A G | |
Package Description | SMALL OUTLINE, R-PSSO-G3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 36 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 0.19 A | |
Drain-source On Resistance-Max | 20 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 0.76 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for BSP300E6327
This table gives cross-reference parts and alternative options found for BSP300E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP300E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSP125 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP300E6327 vs BSP125 |
BSP135L6906 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP300E6327 vs BSP135L6906 |
BSP129E-6327 | 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN | Siemens | BSP300E6327 vs BSP129E-6327 |
BSP88 | Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP300E6327 vs BSP88 |
BSP88 | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN | Infineon Technologies AG | BSP300E6327 vs BSP88 |
BSP129E7941 | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | BSP300E6327 vs BSP129E7941 |
BSP324 | Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP300E6327 vs BSP324 |
BSP300L6433 | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 | Infineon Technologies AG | BSP300E6327 vs BSP300L6433 |
BSP135E6906 | Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Siemens | BSP300E6327 vs BSP135E6906 |
BSP129 | Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Infineon Technologies AG | BSP300E6327 vs BSP129 |