Datasheets
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BSS192,135 by:
Nexperia

BSS192 - 240 V, P-channel vertical D-MOS transistor@en-us SOT-89 3-Pin

Part Details for BSS192,135 by Nexperia

Results Overview of BSS192,135 by Nexperia

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BSS192,135 Information

BSS192,135 by Nexperia is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSS192,135

Part # Distributor Description Stock Price Buy
DISTI # BSS192,135-ND
DigiKey MOSFET P-CH 240V 200MA SOT89 Min Qty: 20000 Lead time: 26 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 20,000 $0.1803
$0.1803 Buy Now
DISTI # BSS192,135
Avnet Americas Trans MOSFET P-CH 240V 0.2A 4-Pin(3+Tab) SOT-89 T/R - Tape and Reel (Alt: BSS192,135) COO: China RoHS: Compliant Min Qty: 20000 Package Multiple: 4000 Lead time: 53 Weeks, 1 Days Container: Tape & Reel 0
  • 20,000 $0.2007
  • 40,000 $0.1923
  • 80,000 $0.1851
  • 160,000 $0.1803
  • 320,000 $0.1731
$0.1731 / $0.2007 Buy Now
DISTI # 771-BSS192135
Mouser Electronics MOSFETs BSS192/SOT89/MPT3 RoHS: Compliant 0
Order Now
Chip Stock TransMOSFETP-CH240V0.2A4-Pin(3+Tab)SOT-89T/R 126000
RFQ
Vyrian Other Function Semiconductors 4037
RFQ

Part Details for BSS192,135

BSS192,135 Part Data Attributes

BSS192,135 Nexperia
Buy Now Datasheet
Compare Parts:
BSS192,135 Nexperia BSS192 - 240 V, P-channel vertical D-MOS transistor@en-us SOT-89 3-Pin
Rohs Code Yes
Part Life Cycle Code Not Recommended
Part Package Code SOT-89
Package Description Sc-62, To-243, 3 Pin
Pin Count 3
Manufacturer Package Code SOT89
Reach Compliance Code Compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Case Connection Drain
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 240 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 12 Ω
FET Technology Metal-Oxide Semiconductor
Feedback Cap-Max (Crss) 15 Pf
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Small Outline
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-Channel
Reference Standard Iec-60134
Surface Mount Yes
Terminal Finish Tin
Terminal Form Flat
Terminal Position Single
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application Switching
Transistor Element Material Silicon

Alternate Parts for BSS192,135

This table gives cross-reference parts and alternative options found for BSS192,135. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS192,135, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSS192,115 Nexperia $0.5931 BSS192 - 240 V, P-channel vertical D-MOS transistor@en-us SOT-89 3-Pin BSS192,135 vs BSS192,115
933943950135 Nexperia Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA BSS192,135 vs 933943950135
BSS192 Nexperia Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA BSS192,135 vs BSS192
Part Number Manufacturer Composite Price Description Compare
TN5325N3-G Microchip Technology Inc $0.5343 MOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 7.0 Ohm BSS192,135 vs TN5325N3-G
VP3203N3-G Microchip Technology Inc $1.2502 MOSFET, P-CHANNEL ENHANCEMENT-MODE, -30V, 0.6 Ohm BSS192,135 vs VP3203N3-G
VN2210N3-G Microchip Technology Inc $1.9814 MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 0.35 Ohm BSS192,135 vs VN2210N3-G
2N6660 Microchip Technology Inc $16.5350 MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 3 Ohm BSS192,135 vs 2N6660
2N7002LT1H onsemi Check for Price 75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN BSS192,135 vs 2N7002LT1H
2N7002KA NXP Semiconductors Check for Price TRANSISTOR 320 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal BSS192,135 vs 2N7002KA
RQK0204TGDQATL-E Renesas Electronics Corporation Check for Price 2300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3 BSS192,135 vs RQK0204TGDQATL-E
PMV117EN,215 Nexperia Check for Price N-channel TrenchMOS logic level FET@en-us TO-236 3-Pin BSS192,135 vs PMV117EN,215
2N6659 NXP Semiconductors Check for Price TRANSISTOR 1400 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39, TO-39, 3 PIN, FET General Purpose Small Signal BSS192,135 vs 2N6659
BSN20WT/R NXP Semiconductors Check for Price TRANSISTOR 80 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-70, 3 PIN, FET General Purpose Small Signal BSS192,135 vs BSN20WT/R
equivalents icon

BSS192,135 Related Parts

BSS192,135 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the BSS192,135 is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance and reliability.

  • To ensure proper biasing, make sure to provide a stable voltage supply, keep the input voltage within the recommended range (VCC = 2.7 V to 5.5 V), and maintain a low impedance output load. Additionally, ensure the device is properly decoupled with capacitors to minimize noise and oscillations.

  • For optimal thermal management, use a multi-layer PCB with a solid ground plane, and place the device near a heat sink or a thermal pad. Ensure good thermal conductivity by using thermal vias and a sufficient copper area. Keep the device away from high-current paths and noisy signals to minimize electromagnetic interference (EMI).

  • To prevent electrostatic discharge (ESD) damage, handle the device by the body or use an anti-static wrist strap. Ensure the PCB is designed with ESD protection in mind, using components like TVS diodes or ESD protection arrays. Follow proper assembly and handling procedures to minimize the risk of ESD damage.

  • When using the BSS192,135 in a high-frequency application, consider the device's frequency response, parasitic capacitance, and inductance. Ensure the PCB layout is optimized for high-frequency operation, using techniques like impedance matching, shielding, and minimizing trace lengths. Additionally, consider using a device with a higher frequency rating or a dedicated high-frequency transistor.

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