Datasheets
BU406H by:

Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

Part Details for BU406H by Samsung Semiconductor

Overview of BU406H by Samsung Semiconductor

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Part Details for BU406H

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BU406H Part Data Attributes

BU406H Samsung Semiconductor
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BU406H Samsung Semiconductor Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 7 A
Collector-Emitter Voltage-Max 200 V
Configuration SINGLE
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 140 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 60 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 10 MHz

Alternate Parts for BU406H

This table gives cross-reference parts and alternative options found for BU406H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BU406H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BU406H Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN Crimson Semiconductor Inc BU406H vs BU406H
Part Number Description Manufacturer Compare
MJ423 10A, NPN, Si, POWER TRANSISTOR, TO-204AA Motorola Mobility LLC BU406H vs MJ423
2SD2161-AZ Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC, ISOLATED TO-220, FULL PACK-3 NEC Electronics Group BU406H vs 2SD2161-AZ
BD165 1.5A, 45V, NPN, Si, POWER TRANSISTOR, TO-225AA Motorola Mobility LLC BU406H vs BD165
2SD1134B Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN Hitachi Ltd BU406H vs 2SD1134B
MJ15011G 10A, 250V, NPN, Si, POWER TRANSISTOR, TO-204AA, LEAD FREE, CASE 1-07, TO-3, 2 PIN Rochester Electronics LLC BU406H vs MJ15011G
BD791T 4A, 100V, NPN, Si, POWER TRANSISTOR, TO-225AA, PLASTIC, CASE 77-09, 3 PIN Motorola Mobility LLC BU406H vs BD791T
MJ15016 15A, 120V, PNP, Si, POWER TRANSISTOR, TO-204AA, TO-3, 2 PIN Motorola Mobility LLC BU406H vs MJ15016
MJ15016G 15A, 120V, PNP, Si, POWER TRANSISTOR, TO-204AA, ROHS COMPLIANT, CASE 1-07, TO-3, 2 PIN Rochester Electronics LLC BU406H vs MJ15016G
2SD1163 Power Bipolar Transistor, 7A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN Hitachi Ltd BU406H vs 2SD1163
MJ15011 10A, 250V, NPN, Si, POWER TRANSISTOR, TO-204AA, CASE 1-07, TO-3, 2 PIN Rochester Electronics LLC BU406H vs MJ15011

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