Datasheets
BUK7E2R7-30B,127 by:

N-channel TrenchMOS standard level FET TO-262 3-Pin

Part Details for BUK7E2R7-30B,127 by NXP Semiconductors

Overview of BUK7E2R7-30B,127 by NXP Semiconductors

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Applications Energy and Power Systems Renewable Energy

Price & Stock for BUK7E2R7-30B,127

Part # Distributor Description Stock Price Buy
DISTI # BUK7E2R7-30B,127
Avnet Americas - Rail/Tube (Alt: BUK7E2R7-30B,127) RoHS: Compliant Min Qty: 241 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube 973 Partner Stock
  • 241 $1.4872
  • 250 $1.4560
  • 490 $1.4144
  • 1,300 $1.3936
  • 2,500 $1.3624
  • 13,000 $1.3312
  • 25,000 $1.2896
$1.2896 / $1.4872 Buy Now
Rochester Electronics BUK7E2R7-30B - 75A, 30V, 0.0027ohm, N-Channel Power MOSFET, TO-262AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 973
  • 1 $1.5100
  • 25 $1.4800
  • 100 $1.4200
  • 500 $1.3600
  • 1,000 $1.2900
$1.2900 / $1.5100 Buy Now

Part Details for BUK7E2R7-30B,127

BUK7E2R7-30B,127 CAD Models

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BUK7E2R7-30B,127 Part Data Attributes

BUK7E2R7-30B,127 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
BUK7E2R7-30B,127 NXP Semiconductors N-channel TrenchMOS standard level FET TO-262 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-262
Package Description PLASTIC, I2PAK-3
Pin Count 3
Manufacturer Package Code SOT226
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 2300 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 967 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK7E2R7-30B,127

This table gives cross-reference parts and alternative options found for BUK7E2R7-30B,127. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK7E2R7-30B,127, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
934058024127 Power Field-Effect Transistor Nexperia BUK7E2R7-30B,127 vs 934058024127
BUK7E2R7-30B,127 N-channel TrenchMOS standard level FET@en-us TO-262 3-Pin Nexperia BUK7E2R7-30B,127 vs BUK7E2R7-30B,127
Part Number Description Manufacturer Compare
IRF2903ZPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG BUK7E2R7-30B,127 vs IRF2903ZPBF
IRF2903Z Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG BUK7E2R7-30B,127 vs IRF2903Z
IRF2903Z Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier BUK7E2R7-30B,127 vs IRF2903Z
BUK7E2R7-30B,127 N-channel TrenchMOS standard level FET@en-us TO-262 3-Pin Nexperia BUK7E2R7-30B,127 vs BUK7E2R7-30B,127
934058024127 Power Field-Effect Transistor Nexperia BUK7E2R7-30B,127 vs 934058024127

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