Transistors
IRF2903Z
Description: Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRF2903Z by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

CAD Models for IRF2903Z by International Rectifier
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Part Data Attributes for IRF2903Z by International Rectifier

IRF2903Z
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
FAST SWITCHING, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
300 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
260 A
Drain-source On Resistance-Max
0.0024 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
290 W
Pulsed Drain Current-Max (IDM)
1020 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRF2903Z
    International Rectifier
    Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRF2903Z

This table gives cross-reference parts and alternative options found for IRF2903Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2903Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF2903Z Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF2903Z vs IRF2903Z
Part Number Description Manufacturer Compare
IRF2903ZPBF Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG IRF2903Z vs IRF2903ZPBF
IRF2903Z Power Field-Effect Transistor, 260A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF2903Z vs IRF2903Z
BUK7E2R7-30B,127 N-channel TrenchMOS standard level FET@en-us TO-262 3-Pin Nexperia IRF2903Z vs BUK7E2R7-30B,127
934058024127 Power Field-Effect Transistor Nexperia IRF2903Z vs 934058024127
BUK7E2R7-30B,127 N-channel TrenchMOS standard level FET TO-262 3-Pin NXP Semiconductors IRF2903Z vs BUK7E2R7-30B,127

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