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Transistors Power Field-Effect Transistors BUZ10

Transistors
BUZ10
Description: Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Overview of BUZ10 by Siemens

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Smart Cities

Price & Stock for BUZ10 by Siemens

Part # Manufacturer Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 20
  • 1 $1.3750
  • 5 $1.2650
  • 21 $1.1000
$1.1000 / $1.3750 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-220AB 3
  • 1 $3.4857
  • 4 $2.9048
$2.9048 / $3.4857 Buy Now
ComSIT USA N CHANNEL ENHANCEMENT MODE AVALANCHE-RATED SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Stock EU - 34825
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

CAD Models for BUZ10 by Siemens
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Part Data Attributes for BUZ10 by Siemens
Parametric Data

BUZ10
Siemens
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SIEMENS A G
Part Package Code
TO-220AB
Package Description
TO-220AB, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
8 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
Drain Current-Max (ID)
23 A
Drain-source On Resistance-Max
0.07 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
170 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
70 W
Pulsed Drain Current-Max (IDM)
92 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
185 ns
Turn-on Time-Max (ton)
100 ns
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  1. BUZ10
    Siemens
    Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
    VS

Alternate Parts for BUZ10

This table gives cross-reference parts and alternative options found for BUZ10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
RFP25N06 Power Field-Effect Transistor, 25A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ10 vs RFP25N06
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products BUZ10 vs IRFZ30
BUZ11A Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG BUZ10 vs BUZ11A
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUZ10 vs IRFZ30
IRFZ30 30A, 50V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ10 vs IRFZ30
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ10 vs HUF75309P3_NL
BUZ11A 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics BUZ10 vs BUZ11A
HUF75309P3 17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ10 vs HUF75309P3
BUZ11A Power Field-Effect Transistor, 30A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ10 vs BUZ11A
BUZ10 Power Field-Effect Transistor, 19.3A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ10 vs BUZ10
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens BUZ10 vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation BUZ10 vs HUF76429D3ST
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier BUZ10 vs IRFR024NTR
2SJ602-ZJ-AZ 20A, 60V, 0.107ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, 3 PIN Renesas Electronics Corporation BUZ10 vs 2SJ602-ZJ-AZ
2SJ174 20A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Renesas Electronics Corporation BUZ10 vs 2SJ174
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation BUZ10 vs RFP14N05L
MTD15N06VT4 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi BUZ10 vs MTD15N06VT4
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BUZ10 vs BUZ71
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUZ10 vs RFD14N06L
HUF75309D3ST Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor BUZ10 vs HUF75309D3ST

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