BUZ32
Description: Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Overview of BUZ32 by Harris Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for BUZ32 by Harris Semiconductor

Part # Manufacturer Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, 9.5A, 200V, 0.4ohm, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 480
  • 1 $0.6125
  • 25 $0.6003
  • 100 $0.5758
  • 500 $0.5513
  • 1,000 $0.5206
$0.5206 / $0.6125 Buy Now

CAD Models for BUZ32 by Harris Semiconductor
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Part Data Attributes for BUZ32 by Harris Semiconductor

BUZ32
Harris Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
9.5 A
Drain-source On Resistance-Max
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
120 pF
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
38 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
220 ns
Turn-on Time-Max (ton)
105 ns
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  1. BUZ32
    Harris Semiconductor
    Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Alternate Parts for BUZ32

This table gives cross-reference parts and alternative options found for BUZ32. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ32, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BUZ32 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ32 vs BUZ32
BUZ32 Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ32 vs BUZ32
IRF630N Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier BUZ32 vs IRF630N
BUZ32 Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ32 vs BUZ32
BUK454-200A TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors BUZ32 vs BUK454-200A
BUZ32 11A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUZ32 vs BUZ32
Part Number Description Manufacturer Compare
IRF631 9A, 150V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ32 vs IRF631
IRF631-001 Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ32 vs IRF631-001
BUZ32 Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ32 vs BUZ32
IRF633-006 Power Field-Effect Transistor, 7.3A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ32 vs IRF633-006
IRF631-009 Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ32 vs IRF631-009
BUZ32 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ32 vs BUZ32
BUZ32 11A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics BUZ32 vs BUZ32
IRF631-010 Power Field-Effect Transistor, 9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ32 vs IRF631-010
BUK454-200A TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power NXP Semiconductors BUZ32 vs BUK454-200A
IRF633 Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUZ32 vs IRF633

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