Part Details for IRF630N by International Rectifier
Overview of IRF630N by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF630N
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 44 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 56 |
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$0.5000 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 40 |
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$2.1742 / $3.2613 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 35 |
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$0.7980 / $1.3300 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 8 |
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$1.2600 / $1.5750 | Buy Now |
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Win Source Electronics | Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | 405430 |
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$0.2080 / $0.3110 | Buy Now |
Part Details for IRF630N
IRF630N CAD Models
IRF630N Part Data Attributes
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IRF630N
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF630N
International Rectifier
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220AB, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | FAST SWITCHING, AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 94 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 9.3 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 225 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 82 W | |
Pulsed Drain Current-Max (IDM) | 37 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF630N
This table gives cross-reference parts and alternative options found for IRF630N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF630N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ32 | 9.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF630N vs BUZ32 |
BUZ32 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | IRF630N vs BUZ32 |
BUZ32 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF630N vs BUZ32 |
BUZ32 | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | IRF630N vs BUZ32 |
BUK454-200A | TRANSISTOR 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF630N vs BUK454-200A |
BUZ32 | 11A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF630N vs BUZ32 |