There are no models available for this part yet.
Overview of BUZ355 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 6 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Price & Stock for BUZ355 by Infineon Technologies AG
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
BUZ355
|
Avnet Americas | - Rail/Tube (Alt: BUZ355) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 4 Partner Stock |
|
RFQ | ||
| Rochester Electronics | BUZ355 - Power Field-Effect Transistor, 6A, 800V, 1.5ohm, N-Channel, MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 4 |
|
$2.1000 / $2.4600 | Buy Now | ||
| ComSIT USA | N-CHANNEL ENHANCEMENT IGBT TO-218 Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 RoHS: Not Compliant |
|
|
RFQ |
CAD Models for BUZ355 by Infineon Technologies AG
Part Data Attributes for BUZ355 by Infineon Technologies AG
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
Infineon
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
720 mJ
|
|
Configuration
|
SINGLE
|
|
DS Breakdown Voltage-Min
|
800 V
|
|
Drain Current-Max (ID)
|
6 A
|
|
Drain-source On Resistance-Max
|
1.5 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-218
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e0
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
125 W
|
|
Pulsed Drain Current-Max (IDM)
|
21 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
Alternate Parts for BUZ355
This table gives cross-reference parts and alternative options found for BUZ355. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ355, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SSH8N80 | Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | BUZ355 vs SSH8N80 |
| BUZ355 | 6A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | BUZ355 vs BUZ355 |
| BUK438-800A | TRANSISTOR 7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | BUZ355 vs BUK438-800A |
| BUZ355 | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Motorola Semiconductor Products | BUZ355 vs BUZ355 |
| SSH8N80 | Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | BUZ355 vs SSH8N80 |
| STW8NA80 | 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | BUZ355 vs STW8NA80 |