| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUZ72A | Siemens | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ72A vs BUZ72A |
| BUZ72A | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ72A vs BUZ72A |
| BUZ72A | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | BUZ72A vs BUZ72A |
| BUZ72A | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ72A vs BUZ72A |
| BUZ72A | New Jersey Semiconductor Products Inc | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ72A vs BUZ72A |
| BUZ72A | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ72A vs BUZ72A |
| BUZ72A | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ72A vs BUZ72A |
Part Details for BUZ72A by STMicroelectronics
Results Overview of BUZ72A by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (7 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ72A Information
BUZ72A by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BUZ72A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,9A I(D),TO-220AB | 8 |
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$3.1350 / $6.2700 | Buy Now |
US Tariff Estimator: BUZ72A by STMicroelectronics
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
BUZ72A Part Data Attributes
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BUZ72A
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
BUZ72A
STMicroelectronics
Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 36 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 40 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 70 W | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 70 Ns | |
| Turn-on Time-Max (ton) | 90 Ns |
Alternate Parts for BUZ72A
This table gives cross-reference parts and alternative options found for BUZ72A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ72A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
BUZ72A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the BUZ72A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and maximum ratings. As a general rule, it's recommended to operate the device within the specified maximum ratings and thermal limits to ensure reliable operation.
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To ensure the BUZ72A is properly biased, follow the recommended biasing scheme in the datasheet, which includes setting the gate-source voltage (Vgs) and drain-source voltage (Vds) within the specified ranges. Additionally, ensure the device is operated within the recommended temperature range and provide adequate heat sinking to prevent thermal runaway.
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For optimal thermal management, it's recommended to use a PCB layout that provides good thermal conductivity, such as using a thermal pad or a heat sink attached to the device. Ensure the device is mounted on a thermally conductive material, and provide adequate clearance around the device to allow for airflow. Follow STMicroelectronics' recommended PCB layout guidelines and thermal management recommendations for the BUZ72A.
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To protect the BUZ72A from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Ensure the device is handled in a controlled environment with minimal humidity and temperature fluctuations. Implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in the system design to prevent ESD events from damaging the device.
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The reliability and lifetime expectations for the BUZ72A are dependent on various factors, including operating conditions, temperature, and usage patterns. STMicroelectronics provides reliability data and lifetime estimates in the datasheet, but it's essential to consult with their application engineers or perform your own reliability testing to determine the device's performance in your specific application.